Abstract
Bi4Te3, as one of the phases of the binary Bi-Te
system, shares many similarities with Bi2Te3,
which is known as a topological insulator and thermoelectric material.
We report the micro-Raman spectroscopy study of 50 nm
Bi4Te3 films on Si substrates prepared by
molecular beam epitaxy. Raman spectra of Bi4Te3
films completely resolve the six predicted Raman-active phonon modes for
the first time. Structural features and Raman tensors of
Bi4Te3 films are introduced. According to the
wavenumbers and assignments of the six eigenpeaks in the Raman spectra
of Bi4Te3 films, it is found that the Raman-active
phonon oscillations in Bi4Te3 films exhibit the
vibrational properties of those in both Bi and
Bi2Te3 films.
Original language | English |
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Pages (from-to) | 87103 |
Journal | AIP Advances |
Volume | 5 |
Issue number | 8 |
DOIs | |
Publication status | Published - 1 Aug 2015 |
Externally published | Yes |