Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy

Hao Xu; Yuxin Song; Wenwu Pan; Qimiao Chen; Xiaoyan Wu; Pengfei Lu; Qian Gong; Shumin Wang

doi:10.1063/1.4928217

Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy

Hao Xu, Yuxin Song, Wenwu Pan, Qimiao Chen, Xiaoyan Wu, Pengfei Lu, Qian Gong, Shumin Wang

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

Bi4Te3, as one of the phases of the binary Bi-Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.

Original language	English
Pages (from-to)	87103
Journal	AIP Advances
Volume	5
Issue number	8
DOIs	https://doi.org/10.1063/1.4928217
Publication status	Published - 1 Aug 2015
Externally published	Yes

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10.1063/1.4928217Licence: CC BY

http://adsabs.harvard.edu/abs/2015AIPA....5h7103X

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title = "Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy",

abstract = "Bi4Te3, as one of the phases of the binary Bi-Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.",

author = "Hao Xu and Yuxin Song and Wenwu Pan and Qimiao Chen and Xiaoyan Wu and Pengfei Lu and Qian Gong and Shumin Wang",

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T1 - Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy

AU - Xu, Hao

AU - Song, Yuxin

AU - Pan, Wenwu

AU - Chen, Qimiao

AU - Wu, Xiaoyan

AU - Lu, Pengfei

AU - Gong, Qian

AU - Wang, Shumin

PY - 2015/8/1

Y1 - 2015/8/1

N2 - Bi4Te3, as one of the phases of the binary Bi-Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.

AB - Bi4Te3, as one of the phases of the binary Bi-Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.

U2 - 10.1063/1.4928217

DO - 10.1063/1.4928217

M3 - Article

VL - 5

SP - 87103

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

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