Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe

Gordon Tsen; Jing Zhang; Charles Musca; John Dell; Jarek Antoszewski; Lorenzo Faraone

Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe

Gordon Tsen, Jing Zhang, Charles Musca, John Dell, Jarek Antoszewski, Lorenzo Faraone

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices
Editors	Lorenzo Faraone, Michael Cortie, Andres Cuevas, John Dell, Chennupati Jagadish, Martin Kocan, Barry Luther-Davies, Mariu
Place of Publication	USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	125-128
Volume	CD-ROM
Edition	Sydney, Australia
ISBN (Print)	9781424427178
Publication status	Published - 2008
Event	Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe - Sydney, Australia Duration: 1 Jan 2008 → …

Conference

Conference	Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe
Period	1/01/08 → …

Cite this

Tsen, G., Zhang, J., Musca, C., Dell, J., Antoszewski, J., & Faraone, L. (2008). Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe. In L. Faraone, M. Cortie, A. Cuevas, J. Dell, C. Jagadish, M. Kocan, B. Luther-Davies, & Mariu (Eds.), Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (Sydney, Australia ed., Vol. CD-ROM, pp. 125-128). IEEE, Institute of Electrical and Electronics Engineers.

Tsen, Gordon ; Zhang, Jing ; Musca, Charles et al. / Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe. Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. editor / Lorenzo Faraone ; Michael Cortie ; Andres Cuevas ; John Dell ; Chennupati Jagadish ; Martin Kocan ; Barry Luther-Davies ; Mariu. Vol. CD-ROM Sydney, Australia. ed. USA : IEEE, Institute of Electrical and Electronics Engineers, 2008. pp. 125-128

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title = "Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe",

author = "Gordon Tsen and Jing Zhang and Charles Musca and John Dell and Jarek Antoszewski and Lorenzo Faraone",

year = "2008",

language = "English",

isbn = "9781424427178",

volume = "CD-ROM",

pages = "125--128",

editor = "Lorenzo Faraone and Michael Cortie and Andres Cuevas and John Dell and Chennupati Jagadish and Martin Kocan and Barry Luther-Davies and Mariu",

booktitle = "Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

edition = "Sydney, Australia",

note = "Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe ; Conference date: 01-01-2008",

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Tsen, G, Zhang, J, Musca, C, Dell, J , Antoszewski, J & Faraone, L 2008, Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe. in L Faraone, M Cortie, A Cuevas, J Dell, C Jagadish, M Kocan, B Luther-Davies & Mariu (eds), Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. Sydney, Australia edn, vol. CD-ROM, IEEE, Institute of Electrical and Electronics Engineers, USA, pp. 125-128, Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe, 1/01/08.

Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe. / Tsen, Gordon; Zhang, Jing; Musca, Charles et al.
Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. ed. / Lorenzo Faraone; Michael Cortie; Andres Cuevas; John Dell; Chennupati Jagadish; Martin Kocan; Barry Luther-Davies; Mariu. Vol. CD-ROM Sydney, Australia. ed. USA: IEEE, Institute of Electrical and Electronics Engineers, 2008. p. 125-128.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe

AU - Tsen, Gordon

AU - Zhang, Jing

AU - Musca, Charles

AU - Dell, John

AU - Antoszewski, Jarek

AU - Faraone, Lorenzo

PY - 2008

Y1 - 2008

M3 - Conference paper

SN - 9781424427178

VL - CD-ROM

SP - 125

EP - 128

BT - Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices

A2 - Faraone, Lorenzo

A2 - Cortie, Michael

A2 - Cuevas, Andres

A2 - Dell, John

A2 - Jagadish, Chennupati

A2 - Kocan, Martin

A2 - Luther-Davies, Barry

A2 - Mariu, null

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - USA

T2 - Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe

Y2 - 1 January 2008

ER -

Tsen G, Zhang J, Musca C, Dell J , Antoszewski J , Faraone L. Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe. In Faraone L, Cortie M, Cuevas A, Dell J, Jagadish C, Kocan M, Luther-Davies B, Mariu, editors, Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices. Sydney, Australia ed. Vol. CD-ROM. USA: IEEE, Institute of Electrical and Electronics Engineers. 2008. p. 125-128