Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe

Gordon Tsen, Jing Zhang, Charles Musca, John Dell, Jarek Antoszewski, Lorenzo Faraone

Research output: Chapter in Book/Conference paperConference paper

1 Citation (Scopus)
Original languageEnglish
Title of host publicationProceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices
EditorsLorenzo Faraone, Michael Cortie, Andres Cuevas, John Dell, Chennupati Jagadish, Martin Kocan, Barry Luther-Davies, Mariu
Place of PublicationUSA
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages125-128
VolumeCD-ROM
EditionSydney, Australia
ISBN (Print)9781424427178
Publication statusPublished - 2008
EventVarious annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe - Sydney, Australia
Duration: 1 Jan 2008 → …

Conference

ConferenceVarious annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe
Period1/01/08 → …

Cite this

Tsen, G., Zhang, J., Musca, C., Dell, J., Antoszewski, J., & Faraone, L. (2008). Various annealing methods for activation of arsenic in Molecular Beam Epitaxy grown HgCdTe. In L. Faraone, M. Cortie, A. Cuevas, J. Dell, C. Jagadish, M. Kocan, B. Luther-Davies, & Mariu (Eds.), Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (Sydney, Australia ed., Vol. CD-ROM, pp. 125-128). IEEE, Institute of Electrical and Electronics Engineers.