In this paper, we report the possibility of achieving sub-kT/q subthreshold slope (i.e. lower than 59.6 mV/decade at T=300K) without using either impact ionization or band-to-band tunneling. The device uses intraband tunneling within the conduction band through barriers whose shape varies with the applied gate voltage. Subthreshold slope as low as 56.5 mV/decade is reported at T=300K. The VBT reported here breaks the 60mV/dec barrier over more than five decades of subthreshold current, which is the highest current range reported so far.
|Title of host publication||2009 IEEE INTERNATIONAL SOI CONFERENCE|
|Number of pages||2|
|Publication status||Published - 2009|
|Event||IEEE International SOI Conference 2009 - Foster City, Canada|
Duration: 5 Oct 2009 → 8 Oct 2009
|Conference||IEEE International SOI Conference 2009|
|Period||5/10/09 → 8/10/09|