Variable-Barrier Tunneling SOI Transistor (VBT)

A. Afzalian, N. Dehdashti, I. Ferain, C. W. Lee, R. Yan, P. Razavi, J. P. Colinge

Research output: Chapter in Book/Conference paperConference paper

3 Citations (Scopus)

Abstract

In this paper, we report the possibility of achieving sub-kT/q subthreshold slope (i.e. lower than 59.6 mV/decade at T=300K) without using either impact ionization or band-to-band tunneling. The device uses intraband tunneling within the conduction band through barriers whose shape varies with the applied gate voltage. Subthreshold slope as low as 56.5 mV/decade is reported at T=300K. The VBT reported here breaks the 60mV/dec barrier over more than five decades of subthreshold current, which is the highest current range reported so far.

Original languageEnglish
Title of host publication2009 IEEE INTERNATIONAL SOI CONFERENCE
PublisherWiley-IEEE Press
Pages133-134
Number of pages2
ISBN (Print)978-1-4244-4256-0
Publication statusPublished - 2009
EventIEEE International SOI Conference 2009 - Foster City, Canada
Duration: 5 Oct 20098 Oct 2009

Conference

ConferenceIEEE International SOI Conference 2009
CountryCanada
CityFoster City
Period5/10/098/10/09

Cite this

Afzalian, A., Dehdashti, N., Ferain, I., Lee, C. W., Yan, R., Razavi, P., & Colinge, J. P. (2009). Variable-Barrier Tunneling SOI Transistor (VBT). In 2009 IEEE INTERNATIONAL SOI CONFERENCE (pp. 133-134). Wiley-IEEE Press.