Using thermography to investigate thermal characteristics of porous silicon

Adrian Keating, Brad McNiven, Xiao Sun, G. Todd Andrews

Research output: Chapter in Book/Conference paperConference paper

37 Downloads (Pure)

Abstract

A low cost thermography system capable of submilliKelvin resolution has been developed and will be described through this work. The instrument is applied to the study of low thermal conductivity porous silicon films, which is a challenge given that thermography has previously been developed to study only thin (released) films or highly conducting films on insulating substrates. Our preliminary results indicate that the system is capable of measuring porous silicon thin films on highly conducting substrates, but requires application of the pertinent underlying physics for parameter determination.

Original languageEnglish
Title of host publication2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018
Place of PublicationAustralia
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages16-18
Number of pages3
ISBN (Electronic)9781538695241
DOIs
Publication statusPublished - 14 May 2019
Event2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018 - Perth, Australia
Duration: 9 Dec 201813 Dec 2018

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices
PublisherIEEE
ISSN (Print)1097-2137

Conference

Conference2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018
CountryAustralia
CityPerth
Period9/12/1813/12/18

Fingerprint

Porous silicon
porous silicon
conduction
Thin films
Conductive films
Substrates
thin films
silicon films
Thermal conductivity
thermal conductivity
Physics
physics
Costs
Hot Temperature

Cite this

Keating, A., McNiven, B., Sun, X., & Andrews, G. T. (2019). Using thermography to investigate thermal characteristics of porous silicon. In 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018 (pp. 16-18). [8715236] (Conference on Optoelectronic and Microelectronic Materials and Devices). Australia: IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/COMMAD.2018.8715236
Keating, Adrian ; McNiven, Brad ; Sun, Xiao ; Andrews, G. Todd. / Using thermography to investigate thermal characteristics of porous silicon. 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018. Australia : IEEE, Institute of Electrical and Electronics Engineers, 2019. pp. 16-18 (Conference on Optoelectronic and Microelectronic Materials and Devices).
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Keating, A, McNiven, B, Sun, X & Andrews, GT 2019, Using thermography to investigate thermal characteristics of porous silicon. in 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018., 8715236, Conference on Optoelectronic and Microelectronic Materials and Devices, IEEE, Institute of Electrical and Electronics Engineers, Australia, pp. 16-18, 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018, Perth, Australia, 9/12/18. https://doi.org/10.1109/COMMAD.2018.8715236

Using thermography to investigate thermal characteristics of porous silicon. / Keating, Adrian; McNiven, Brad; Sun, Xiao; Andrews, G. Todd.

2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018. Australia : IEEE, Institute of Electrical and Electronics Engineers, 2019. p. 16-18 8715236 (Conference on Optoelectronic and Microelectronic Materials and Devices).

Research output: Chapter in Book/Conference paperConference paper

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Keating A, McNiven B, Sun X, Andrews GT. Using thermography to investigate thermal characteristics of porous silicon. In 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018. Australia: IEEE, Institute of Electrical and Electronics Engineers. 2019. p. 16-18. 8715236. (Conference on Optoelectronic and Microelectronic Materials and Devices). https://doi.org/10.1109/COMMAD.2018.8715236