Using Current Density to Control Stress and Porosity in Porous Silicon Fabrication

Research output: Contribution to conferenceConference presentation/ephemera

Original languageEnglish
Publication statusPublished - 2018
EventPorous Semiconductors Science and Technology - La Grande Motte, La Grande Motte, France
Duration: 11 Mar 201816 Mar 2018
http://www.psst2018.org/

Conference

ConferencePorous Semiconductors Science and Technology
CountryFrance
CityLa Grande Motte
Period11/03/1816/03/18
Internet address

Cite this

Afandi, Y., Sun, X., Parish, G., & Keating, A. (2018). Using Current Density to Control Stress and Porosity in Porous Silicon Fabrication. Paper presented at Porous Semiconductors Science and Technology , La Grande Motte, France.