Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10GHz

R. Coffie, L. Shen, Giacinta Parish, A. Chini, D. Buttari, S. Heikman, S. Keller, U.K. Mishra

    Research output: Contribution to journalArticle

    12 Citations (Scopus)

    Abstract

    A novel gate process utilising SiO2 to cover the recess sidewall on the drain side of a p-GaN/AlGaN/GaN high electron mobility transistor is presented. Improvements in breakdown voltage and output power are demonstrated with no degradation in small-signal performance.
    Original languageEnglish
    Pages (from-to)1419-1420
    JournalElectronics Letters
    Volume39
    Issue number19
    DOIs
    Publication statusPublished - 2003

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  • Cite this

    Coffie, R., Shen, L., Parish, G., Chini, A., Buttari, D., Heikman, S., Keller, S., & Mishra, U. K. (2003). Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10GHz. Electronics Letters, 39(19), 1419-1420. https://doi.org/10.1049/el:20030872