Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10GHz

R. Coffie; L. Shen; Giacinta Parish; A. Chini; D. Buttari; S. Heikman; S. Keller; U.K. Mishra

doi:10.1049/el:20030872

Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10GHz

R. Coffie, L. Shen, Giacinta Parish, A. Chini, D. Buttari, S. Heikman, S. Keller, U.K. Mishra

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

A novel gate process utilising SiO2 to cover the recess sidewall on the drain side of a p-GaN/AlGaN/GaN high electron mobility transistor is presented. Improvements in breakdown voltage and output power are demonstrated with no degradation in small-signal performance.

Original language	English
Pages (from-to)	1419-1420
Journal	Electronics Letters
Volume	39
Issue number	19
DOIs	https://doi.org/10.1049/el:20030872
Publication status	Published - 2003

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@article{34175ea57a464b7ab5c67be47048c70e,

title = "Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10GHz",

abstract = "A novel gate process utilising SiO2 to cover the recess sidewall on the drain side of a p-GaN/AlGaN/GaN high electron mobility transistor is presented. Improvements in breakdown voltage and output power are demonstrated with no degradation in small-signal performance.",

author = "R. Coffie and L. Shen and Giacinta Parish and A. Chini and D. Buttari and S. Heikman and S. Keller and U.K. Mishra",

year = "2003",

doi = "10.1049/el:20030872",

language = "English",

volume = "39",

pages = "1419--1420",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "19",

}

TY - JOUR

T1 - Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10GHz

AU - Coffie, R.

AU - Shen, L.

AU - Parish, Giacinta

AU - Chini, A.

AU - Buttari, D.

AU - Heikman, S.

AU - Keller, S.

AU - Mishra, U.K.

PY - 2003

Y1 - 2003

N2 - A novel gate process utilising SiO2 to cover the recess sidewall on the drain side of a p-GaN/AlGaN/GaN high electron mobility transistor is presented. Improvements in breakdown voltage and output power are demonstrated with no degradation in small-signal performance.

AB - A novel gate process utilising SiO2 to cover the recess sidewall on the drain side of a p-GaN/AlGaN/GaN high electron mobility transistor is presented. Improvements in breakdown voltage and output power are demonstrated with no degradation in small-signal performance.

U2 - 10.1049/el:20030872

DO - 10.1049/el:20030872

M3 - Article

SN - 0013-5194

VL - 39

SP - 1419

EP - 1420

JO - Electronics Letters

JF - Electronics Letters

IS - 19

ER -

Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10GHz

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