A novel gate process utilising SiO2 to cover the recess sidewall on the drain side of a p-GaN/AlGaN/GaN high electron mobility transistor is presented. Improvements in breakdown voltage and output power are demonstrated with no degradation in small-signal performance.
Coffie, R., Shen, L., Parish, G., Chini, A., Buttari, D., Heikman, S., Keller, S., & Mishra, U. K. (2003). Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10GHz. Electronics Letters, 39(19), 1419-1420. https://doi.org/10.1049/el:20030872