Uniformity in HgCdTe Diode Arrays Fabricated by Reactive Ion Etching

R. Pal; P.K. Chaudhury; B.L. Sharma; V. Kumar; Charles Musca; John Dell; Lorenzo Faraone

doi:10.1007/s11664-004-0284-6

Uniformity in HgCdTe Diode Arrays Fabricated by Reactive Ion Etching

R. Pal, P.K. Chaudhury, B.L. Sharma, V. Kumar, Charles Musca, John Dell, Lorenzo Faraone

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

Two-dimensional, midwavelength infrared (MWIR) HgCdTe detector arrays have been fabricated using reactive ion etching (RIE). Detector-to-detector uniformity has been studied in the devices fabricated with CdTe- and ZnS-passivation layers. Mapping of the doping profile, passivant/HgCdTe interface electrical properties, and diode impedance-area product (R(0)A(j)) in a two-dimensional array of diodes has been carried out. Temperature and perimeter/area dependence of the dark current are studied to identify the bulk and surface current components. Maximum R(0)A(j) = 2 x 10(7) Omegacm(2) was achieved in CdTe-passivated, 200 x 200 mum(2) diode arrays. It demonstrates that CdTe-passivated, RIE-processed HgCdTe is a feasible technology.

Original language	English
Pages (from-to)	141-145
Journal	Journal of Electronic Materials
Volume	33
Issue number	2
DOIs	https://doi.org/10.1007/s11664-004-0284-6
Publication status	Published - 2004

Fingerprint

Cite this

Pal, R., Chaudhury, P. K., Sharma, B. L., Kumar, V., Musca, C., Dell, J., & Faraone, L. (2004). Uniformity in HgCdTe Diode Arrays Fabricated by Reactive Ion Etching. Journal of Electronic Materials, 33(2), 141-145. https://doi.org/10.1007/s11664-004-0284-6

@article{96910ddcba6e4dd69f711b40ba23fe57,

title = "Uniformity in HgCdTe Diode Arrays Fabricated by Reactive Ion Etching",

abstract = "Two-dimensional, midwavelength infrared (MWIR) HgCdTe detector arrays have been fabricated using reactive ion etching (RIE). Detector-to-detector uniformity has been studied in the devices fabricated with CdTe- and ZnS-passivation layers. Mapping of the doping profile, passivant/HgCdTe interface electrical properties, and diode impedance-area product (R(0)A(j)) in a two-dimensional array of diodes has been carried out. Temperature and perimeter/area dependence of the dark current are studied to identify the bulk and surface current components. Maximum R(0)A(j) = 2 x 10(7) Omegacm(2) was achieved in CdTe-passivated, 200 x 200 mum(2) diode arrays. It demonstrates that CdTe-passivated, RIE-processed HgCdTe is a feasible technology.",

author = "R. Pal and P.K. Chaudhury and B.L. Sharma and V. Kumar and Charles Musca and John Dell and Lorenzo Faraone",

year = "2004",

doi = "10.1007/s11664-004-0284-6",

language = "English",

volume = "33",

pages = "141--145",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

number = "2",

}

TY - JOUR

T1 - Uniformity in HgCdTe Diode Arrays Fabricated by Reactive Ion Etching

AU - Pal, R.

AU - Chaudhury, P.K.

AU - Sharma, B.L.

AU - Kumar, V.

AU - Musca, Charles

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2004

Y1 - 2004

N2 - Two-dimensional, midwavelength infrared (MWIR) HgCdTe detector arrays have been fabricated using reactive ion etching (RIE). Detector-to-detector uniformity has been studied in the devices fabricated with CdTe- and ZnS-passivation layers. Mapping of the doping profile, passivant/HgCdTe interface electrical properties, and diode impedance-area product (R(0)A(j)) in a two-dimensional array of diodes has been carried out. Temperature and perimeter/area dependence of the dark current are studied to identify the bulk and surface current components. Maximum R(0)A(j) = 2 x 10(7) Omegacm(2) was achieved in CdTe-passivated, 200 x 200 mum(2) diode arrays. It demonstrates that CdTe-passivated, RIE-processed HgCdTe is a feasible technology.

AB - Two-dimensional, midwavelength infrared (MWIR) HgCdTe detector arrays have been fabricated using reactive ion etching (RIE). Detector-to-detector uniformity has been studied in the devices fabricated with CdTe- and ZnS-passivation layers. Mapping of the doping profile, passivant/HgCdTe interface electrical properties, and diode impedance-area product (R(0)A(j)) in a two-dimensional array of diodes has been carried out. Temperature and perimeter/area dependence of the dark current are studied to identify the bulk and surface current components. Maximum R(0)A(j) = 2 x 10(7) Omegacm(2) was achieved in CdTe-passivated, 200 x 200 mum(2) diode arrays. It demonstrates that CdTe-passivated, RIE-processed HgCdTe is a feasible technology.

U2 - 10.1007/s11664-004-0284-6

DO - 10.1007/s11664-004-0284-6

M3 - Article

VL - 33

SP - 141

EP - 145

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 2

ER -

Access to Document

10.1007/s11664-004-0284-6