TY - JOUR
T1 - Uniformity in HgCdTe Diode Arrays Fabricated by Reactive Ion Etching
AU - Pal, R.
AU - Chaudhury, P.K.
AU - Sharma, B.L.
AU - Kumar, V.
AU - Musca, Charles
AU - Dell, John
AU - Faraone, Lorenzo
PY - 2004
Y1 - 2004
N2 - Two-dimensional, midwavelength infrared (MWIR) HgCdTe detector arrays have been fabricated using reactive ion etching (RIE). Detector-to-detector uniformity has been studied in the devices fabricated with CdTe- and ZnS-passivation layers. Mapping of the doping profile, passivant/HgCdTe interface electrical properties, and diode impedance-area product (R(0)A(j)) in a two-dimensional array of diodes has been carried out. Temperature and perimeter/area dependence of the dark current are studied to identify the bulk and surface current components. Maximum R(0)A(j) = 2 x 10(7) Omegacm(2) was achieved in CdTe-passivated, 200 x 200 mum(2) diode arrays. It demonstrates that CdTe-passivated, RIE-processed HgCdTe is a feasible technology.
AB - Two-dimensional, midwavelength infrared (MWIR) HgCdTe detector arrays have been fabricated using reactive ion etching (RIE). Detector-to-detector uniformity has been studied in the devices fabricated with CdTe- and ZnS-passivation layers. Mapping of the doping profile, passivant/HgCdTe interface electrical properties, and diode impedance-area product (R(0)A(j)) in a two-dimensional array of diodes has been carried out. Temperature and perimeter/area dependence of the dark current are studied to identify the bulk and surface current components. Maximum R(0)A(j) = 2 x 10(7) Omegacm(2) was achieved in CdTe-passivated, 200 x 200 mum(2) diode arrays. It demonstrates that CdTe-passivated, RIE-processed HgCdTe is a feasible technology.
U2 - 10.1007/s11664-004-0284-6
DO - 10.1007/s11664-004-0284-6
M3 - Article
VL - 33
SP - 141
EP - 145
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 2
ER -