Two-dimensional, midwavelength infrared (MWIR) HgCdTe detector arrays have been fabricated using reactive ion etching (RIE). Detector-to-detector uniformity has been studied in the devices fabricated with CdTe- and ZnS-passivation layers. Mapping of the doping profile, passivant/HgCdTe interface electrical properties, and diode impedance-area product (R(0)A(j)) in a two-dimensional array of diodes has been carried out. Temperature and perimeter/area dependence of the dark current are studied to identify the bulk and surface current components. Maximum R(0)A(j) = 2 x 10(7) Omegacm(2) was achieved in CdTe-passivated, 200 x 200 mum(2) diode arrays. It demonstrates that CdTe-passivated, RIE-processed HgCdTe is a feasible technology.