Uniformity in HgCdTe Diode Arrays Fabricated by Reactive Ion Etching

R. Pal, P.K. Chaudhury, B.L. Sharma, V. Kumar, Charles Musca, John Dell, Lorenzo Faraone

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Two-dimensional, midwavelength infrared (MWIR) HgCdTe detector arrays have been fabricated using reactive ion etching (RIE). Detector-to-detector uniformity has been studied in the devices fabricated with CdTe- and ZnS-passivation layers. Mapping of the doping profile, passivant/HgCdTe interface electrical properties, and diode impedance-area product (R(0)A(j)) in a two-dimensional array of diodes has been carried out. Temperature and perimeter/area dependence of the dark current are studied to identify the bulk and surface current components. Maximum R(0)A(j) = 2 x 10(7) Omegacm(2) was achieved in CdTe-passivated, 200 x 200 mum(2) diode arrays. It demonstrates that CdTe-passivated, RIE-processed HgCdTe is a feasible technology.
Original languageEnglish
Pages (from-to)141-145
JournalJournal of Electronic Materials
Volume33
Issue number2
DOIs
Publication statusPublished - 2004

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