Ultrathin Sb2Se3 Nanowires for Polarimetric Imaging Photodetectors with a High Signal/Noise Ratio

Songqing Zhang, Han Wang, Maxwell Merle Kirchner, Junliang Liu, Huijia Luo, Yongling Ren, Cailei Yuan, Haroldo Takashi Hattori, Andrey E. Miroshnichenko, Wen Lei

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


This work presents a study on the optical applications of chemical vapor deposition-grown Sb2Se3 nanowires in polarized single nanowire photodetectors. High-quality Sb2Se3 nanowires are obtained with diameters as small as ≈15 nm, which is the first report for ultrathin Sb2Se3 nanowires. The fabricated Sb2Se3 nanowire-based photodetector presents a low shot noise of ≈ 9 × 10–16 A Hz–1/2, a large signal/noise ratio of 1436.55, a high responsivity of 3.61 A W–1, and a high specific detectivity of 2.36 × 1011 Jones, which can be attributed to the high-quality crystalline nanowires obtained. More interestingly, the Sb2Se3 nanowire-based photodetectors exhibit broadband polarized photoresponse to incident light with wavelengths ranging from visible to near-infrared (532 – 830 nm). A linearly dichroic ratio of 1.71 is obtained for the 830 nm light illumination. The Sb2Se3 nanowire detectors also present appropriate polarimetric imaging quality, revealing the potential of Sb2Se3 nanowires for polarimetric imaging applications.

Original languageEnglish
Article number2200448
JournalAdvanced Materials Interfaces
Issue number17
Early online date2022
Publication statusPublished - 13 Jun 2022


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