Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

M. Mikulics, M. Marso, P. Javorka, P. Kordo¿, H. Luth, Martin Kocan, A. Rizzi, A. Wu, R. Sobolewsk

    Research output: Contribution to journalArticlepeer-review

    45 Citations (Scopus)

    Abstract

    We have fabricated and characterized ultrafast metal-semiconductor- metal photodetectors based on low-temperature-grown (LT) GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4-ps-wide electrical transients using 360-nm-wavelength and 100-fs-duration laser pulses, that is corresponding to the carrier lifetime of 720 fs in our LT GaN material. © 2005 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)2111100-1 - 2111100-3
    JournalApplied Physics Letters
    Volume86
    Issue number21
    DOIs
    Publication statusPublished - 2005

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