Ultra-scaled Z-RAM cell

S. Okhonin, M. Nagoga, C. -W. Lee, J. -P. Colinge, A. Afzalian, R. Yan, N. Dehdashti Akhavan, W. Xiong, V. Sverdlov, S. Selberherr, C. Mazure

Research output: Chapter in Book/Conference paperConference paper

30 Citations (Scopus)

Abstract

Ultra-scaled Z-RAM cells based on MuGFETs are demonstrated for the first time. Effects of physical parameters such as channel doping concentration, fin width, and gate length on Z-RAM cell performance are discussed. Transient measurements and simulations prove that the basic operational principles are effective on Z-RAM cells with a gate length down to 12.5 nm.

Original languageEnglish
Title of host publication2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS
PublisherWiley-IEEE Press
Pages157-+
Number of pages2
ISBN (Print)978-1-4244-1954-8
DOIs
Publication statusPublished - 2008
EventIEEE International SOI Conference - New Platz
Duration: 6 Oct 20089 Oct 2008

Publication series

NameIEEE International SOI Conference
PublisherIEEE
ISSN (Print)1078-621X

Conference

ConferenceIEEE International SOI Conference
CityNew Platz
Period6/10/089/10/08

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