Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure: NEGF approach

Ali A. Orouji; Nima Dehdashti; R. Faez

doi:10.1109/IWPSD.2007.4472491

Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure: NEGF approach

Ali A. Orouji, Nima Dehdashti, R. Faez

School of Engineering

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Abstract

For the first time, we present self-consistent solution of ultrathin body device structures to investigate the device parameters variation on the characteristics of nanoscale MOSFET. Our two dimensional (2-D) device simulator is based on Nonequilibrium Green's Function (NEGF) formalism. Starting from a basic structure (DG-MOSFET) with a gate length of 10 nm, variation of gate length, channel thickness, gate oxide parameters was carried out in connection with the numerical calculation of device characteristics. In this work Quantum transport equations are solved in 2-D by NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of simulation to get potential profile. Once self-consistently achieved all parameters of interest (e.g. potential profile, charge density, DIBL, etc) can be measured.

Original language	English
Title of host publication	PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007
Editors	KL Narasimhan, DK Sharma
Publisher	Wiley-IEEE Press
Pages	240-242
Number of pages	3
ISBN (Print)	978-1-4244-1727-8
DOIs	https://doi.org/10.1109/IWPSD.2007.4472491
Publication status	Published - 2007
Event	14th International Workshop on the Physics of Semiconductor Devices - Mumbai, India Duration: 17 Dec 2007 → 20 Dec 2007

Conference

Conference	14th International Workshop on the Physics of Semiconductor Devices
Country/Territory	India
City	Mumbai
Period	17/12/07 → 20/12/07

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10.1109/IWPSD.2007.4472491

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title = "Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure: NEGF approach",

abstract = "For the first time, we present self-consistent solution of ultrathin body device structures to investigate the device parameters variation on the characteristics of nanoscale MOSFET. Our two dimensional (2-D) device simulator is based on Nonequilibrium Green's Function (NEGF) formalism. Starting from a basic structure (DG-MOSFET) with a gate length of 10 nm, variation of gate length, channel thickness, gate oxide parameters was carried out in connection with the numerical calculation of device characteristics. In this work Quantum transport equations are solved in 2-D by NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of simulation to get potential profile. Once self-consistently achieved all parameters of interest (e.g. potential profile, charge density, DIBL, etc) can be measured.",

keywords = "dimensional simulation, quantum mechanical, NEGF, ultra thin body(UTB) DGMOSFET, TRANSPORT",

author = "Orouji, {Ali A.} and Nima Dehdashti and R. Faez",

year = "2007",

doi = "10.1109/IWPSD.2007.4472491",

language = "English",

isbn = "978-1-4244-1727-8",

pages = "240--242",

editor = "KL Narasimhan and DK Sharma",

booktitle = "PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007",

publisher = "Wiley-IEEE Press",

note = "14th International Workshop on the Physics of Semiconductor Devices ; Conference date: 17-12-2007 Through 20-12-2007",

}

Orouji, AA, Dehdashti, N & Faez, R 2007, Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure: NEGF approach. in KL Narasimhan & DK Sharma (eds), PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007. Wiley-IEEE Press, pp. 240-242, 14th International Workshop on the Physics of Semiconductor Devices, Mumbai, India, 17/12/07. https://doi.org/10.1109/IWPSD.2007.4472491

Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure: NEGF approach. / Orouji, Ali A.; Dehdashti, Nima; Faez, R.
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007. ed. / KL Narasimhan; DK Sharma. Wiley-IEEE Press, 2007. p. 240-242.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure

T2 - 14th International Workshop on the Physics of Semiconductor Devices

AU - Orouji, Ali A.

AU - Dehdashti, Nima

AU - Faez, R.

PY - 2007

Y1 - 2007

N2 - For the first time, we present self-consistent solution of ultrathin body device structures to investigate the device parameters variation on the characteristics of nanoscale MOSFET. Our two dimensional (2-D) device simulator is based on Nonequilibrium Green's Function (NEGF) formalism. Starting from a basic structure (DG-MOSFET) with a gate length of 10 nm, variation of gate length, channel thickness, gate oxide parameters was carried out in connection with the numerical calculation of device characteristics. In this work Quantum transport equations are solved in 2-D by NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of simulation to get potential profile. Once self-consistently achieved all parameters of interest (e.g. potential profile, charge density, DIBL, etc) can be measured.

AB - For the first time, we present self-consistent solution of ultrathin body device structures to investigate the device parameters variation on the characteristics of nanoscale MOSFET. Our two dimensional (2-D) device simulator is based on Nonequilibrium Green's Function (NEGF) formalism. Starting from a basic structure (DG-MOSFET) with a gate length of 10 nm, variation of gate length, channel thickness, gate oxide parameters was carried out in connection with the numerical calculation of device characteristics. In this work Quantum transport equations are solved in 2-D by NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of simulation to get potential profile. Once self-consistently achieved all parameters of interest (e.g. potential profile, charge density, DIBL, etc) can be measured.

KW - dimensional simulation

KW - quantum mechanical

KW - NEGF

KW - ultra thin body(UTB) DGMOSFET

KW - TRANSPORT

U2 - 10.1109/IWPSD.2007.4472491

DO - 10.1109/IWPSD.2007.4472491

M3 - Conference paper

SN - 978-1-4244-1727-8

SP - 240

EP - 242

BT - PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007

A2 - Narasimhan, KL

A2 - Sharma, DK

PB - Wiley-IEEE Press

Y2 - 17 December 2007 through 20 December 2007

ER -

Two-dimensional quantum simulation of scaling effects in ultrathin body MOSFET structure: NEGF approach

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