Abstract
We fabricated nanodevices from MoxW1-xTe2 (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.
| Original language | English |
|---|---|
| Article number | 135705 |
| Journal | Nanotechnology |
| Volume | 29 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 12 Feb 2018 |
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Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping. / Fu, Dongzhi; Pan, Xingchen; Bai, Zhanbin; Fei, Fucong; Umana-Membreno, Gilberto A.; Song, Honglian; Wang, Xuelin; Wang, Baigeng; Song, Fengqi.
In: Nanotechnology, Vol. 29, No. 13, 135705, 12.02.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping
AU - Fu, Dongzhi
AU - Pan, Xingchen
AU - Bai, Zhanbin
AU - Fei, Fucong
AU - Umana-Membreno, Gilberto A.
AU - Song, Honglian
AU - Wang, Xuelin
AU - Wang, Baigeng
AU - Song, Fengqi
PY - 2018/2/12
Y1 - 2018/2/12
N2 - We fabricated nanodevices from MoxW1-xTe2 (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.
AB - We fabricated nanodevices from MoxW1-xTe2 (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.
UR - http://www.scopus.com/inward/record.url?scp=85042252931&partnerID=8YFLogxK
U2 - 10.1088/1361-6528/aaa811
DO - 10.1088/1361-6528/aaa811
M3 - Article
VL - 29
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 13
M1 - 135705
ER -