Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping

Dongzhi Fu, Xingchen Pan, Zhanbin Bai, Fucong Fei, Gilberto A. Umana-Membreno, Honglian Song, Xuelin Wang, Baigeng Wang, Fengqi Song

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    We fabricated nanodevices from MoxW1-xTe2 (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.

    Original languageEnglish
    Article number135705
    JournalNanotechnology
    Volume29
    Issue number13
    DOIs
    Publication statusPublished - 12 Feb 2018

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    Metalloids
    Tuning
    Doping (additives)
    Magnetoresistance
    Electrons
    Experiments

    Cite this

    Fu, Dongzhi ; Pan, Xingchen ; Bai, Zhanbin ; Fei, Fucong ; Umana-Membreno, Gilberto A. ; Song, Honglian ; Wang, Xuelin ; Wang, Baigeng ; Song, Fengqi. / Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping. In: Nanotechnology. 2018 ; Vol. 29, No. 13.
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    abstract = "We fabricated nanodevices from MoxW1-xTe2 (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.",
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    Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping. / Fu, Dongzhi; Pan, Xingchen; Bai, Zhanbin; Fei, Fucong; Umana-Membreno, Gilberto A.; Song, Honglian; Wang, Xuelin; Wang, Baigeng; Song, Fengqi.

    In: Nanotechnology, Vol. 29, No. 13, 135705, 12.02.2018.

    Research output: Contribution to journalArticle

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    AU - Fu, Dongzhi

    AU - Pan, Xingchen

    AU - Bai, Zhanbin

    AU - Fei, Fucong

    AU - Umana-Membreno, Gilberto A.

    AU - Song, Honglian

    AU - Wang, Xuelin

    AU - Wang, Baigeng

    AU - Song, Fengqi

    PY - 2018/2/12

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    AB - We fabricated nanodevices from MoxW1-xTe2 (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.

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