Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping

Dongzhi Fu; Xingchen Pan; Zhanbin Bai; Fucong Fei; Gilberto A. Umana-Membreno; Honglian Song; Xuelin Wang; Baigeng Wang; Fengqi Song

doi:10.1088/1361-6528/aaa811

Tuning the electrical transport of type II Weyl semimetal WTe₂ nanodevices by Mo doping

Dongzhi Fu, Xingchen Pan, Zhanbin Bai, Fucong Fei, Gilberto A. Umana-Membreno, Honglian Song, Xuelin Wang, Baigeng Wang, Fengqi Song

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We fabricated nanodevices from Mo_xW_1-xTe₂ (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.

Original language	English
Article number	135705
Journal	Nanotechnology
Volume	29
Issue number	13
DOIs	https://doi.org/10.1088/1361-6528/aaa811
Publication status	Published - 12 Feb 2018

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@article{8f647cd55abf4c3fbce5cc430b693376,

title = "Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping",

abstract = "We fabricated nanodevices from MoxW1-xTe2 (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.",

author = "Dongzhi Fu and Xingchen Pan and Zhanbin Bai and Fucong Fei and Umana-Membreno, {Gilberto A.} and Honglian Song and Xuelin Wang and Baigeng Wang and Fengqi Song",

year = "2018",

month = feb,

day = "12",

doi = "10.1088/1361-6528/aaa811",

language = "English",

volume = "29",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing",

number = "13",

}

TY - JOUR

T1 - Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping

AU - Fu, Dongzhi

AU - Pan, Xingchen

AU - Bai, Zhanbin

AU - Fei, Fucong

AU - Umana-Membreno, Gilberto A.

AU - Song, Honglian

AU - Wang, Xuelin

AU - Wang, Baigeng

AU - Song, Fengqi

PY - 2018/2/12

Y1 - 2018/2/12

N2 - We fabricated nanodevices from MoxW1-xTe2 (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.

AB - We fabricated nanodevices from MoxW1-xTe2 (x = 0, 0.07, 0.35), and conducted a systematic comparative study of their electrical transport. Magnetoresistance measurements show that Mo doping can significantly suppress mobility and magnetoresistance. The results for the analysis of the two band model show that doping with Mo does not break the carrier balance. Through analysis of Shubnikov-de Haas oscillations, we found that Mo doping also has a strong suppressive effect on the quantum oscillation of the sample, and the higher the ratio of Mo, the fewer pockets were observed in our experiments. Furthermore, the effective mass of electron and hole increases gradually with increasing Mo ratio, while the corresponding quantum mobility decreases rapidly.

UR - http://www.scopus.com/inward/record.url?scp=85042252931&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aaa811

DO - 10.1088/1361-6528/aaa811

M3 - Article

AN - SCOPUS:85042252931

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 13

M1 - 135705

ER -

Tuning the electrical transport of type II Weyl semimetal WTe₂ nanodevices by Mo doping

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Fundamental electronic transport in emerging 1D nanoelectronic devices

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Tuning the electrical transport of type II Weyl semimetal WTe2 nanodevices by Mo doping

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Fundamental electronic transport in emerging 1D nanoelectronic devices

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Tuning the electrical transport of type II Weyl semimetal WTe₂ nanodevices by Mo doping