Tri-State Memristors Based on Composable Discrete Devices

Xiao Jing Li; Xiao Yuan Wang; Pu Li; Herbert H.C. Iu; Jason K. Eshraghian; Sanjoy Kumar Nandi; Shimul Kanti Nath; Robert G. Elliman

doi:10.1142/S0218127423300185

Tri-State Memristors Based on Composable Discrete Devices

Xiao Jing Li, Xiao Yuan Wang, Pu Li, Herbert H.C. Iu, Jason K. Eshraghian, Sanjoy Kumar Nandi, Shimul Kanti Nath, Robert G. Elliman

Electrical, Electronic and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We develop a tri-state memristive system based on composable binarized memristors, from both a dynamical systems construction to the development of in-house fabricated devices. Firstly, based on the SPICE model of the binary memristor, the series and parallel circuits of binary memristors are designed, and the characteristics of each circuit are analyzed in detail. Secondly, through the analysis of the connection direction and parameters of the two binary memristors, an effective method to construct a tri-state memristor is proposed, and verified using SPICE simulations. Finally, the characteristics of the constructed equivalent tri-state memristor are analyzed, and it is concluded that the amplitude, frequency and type of the input signal can affect the characteristics of the equivalent tri-state memristor. Predictions from this modeling were validated experimentally using Au/Nb2O5/Nb cross-point devices.

Original language	English
Article number	2330018
Journal	International Journal of Bifurcation and Chaos
Volume	33
Issue number	7
DOIs	https://doi.org/10.1142/S0218127423300185
Publication status	Published - 15 Jun 2023

Access to Document

10.1142/S0218127423300185

Cite this

@article{f3e85b6b5c344088808346777e20acbb,

title = "Tri-State Memristors Based on Composable Discrete Devices",

abstract = "We develop a tri-state memristive system based on composable binarized memristors, from both a dynamical systems construction to the development of in-house fabricated devices. Firstly, based on the SPICE model of the binary memristor, the series and parallel circuits of binary memristors are designed, and the characteristics of each circuit are analyzed in detail. Secondly, through the analysis of the connection direction and parameters of the two binary memristors, an effective method to construct a tri-state memristor is proposed, and verified using SPICE simulations. Finally, the characteristics of the constructed equivalent tri-state memristor are analyzed, and it is concluded that the amplitude, frequency and type of the input signal can affect the characteristics of the equivalent tri-state memristor. Predictions from this modeling were validated experimentally using Au/Nb2O5/Nb cross-point devices.",

keywords = "Binary memristor, LTspice, series and parallel circuits, tri-state memristor",

author = "Li, {Xiao Jing} and Wang, {Xiao Yuan} and Pu Li and Iu, {Herbert H.C.} and Eshraghian, {Jason K.} and Nandi, {Sanjoy Kumar} and Nath, {Shimul Kanti} and Elliman, {Robert G.}",

year = "2023",

month = jun,

day = "15",

doi = "10.1142/S0218127423300185",

language = "English",

volume = "33",

journal = "International Journal of Bifurcation and Chaos",

issn = "0218-1274",

publisher = "World Scientific Publishing",

number = "7",

}

TY - JOUR

T1 - Tri-State Memristors Based on Composable Discrete Devices

AU - Li, Xiao Jing

AU - Wang, Xiao Yuan

AU - Li, Pu

AU - Iu, Herbert H.C.

AU - Eshraghian, Jason K.

AU - Nandi, Sanjoy Kumar

AU - Nath, Shimul Kanti

AU - Elliman, Robert G.

PY - 2023/6/15

Y1 - 2023/6/15

N2 - We develop a tri-state memristive system based on composable binarized memristors, from both a dynamical systems construction to the development of in-house fabricated devices. Firstly, based on the SPICE model of the binary memristor, the series and parallel circuits of binary memristors are designed, and the characteristics of each circuit are analyzed in detail. Secondly, through the analysis of the connection direction and parameters of the two binary memristors, an effective method to construct a tri-state memristor is proposed, and verified using SPICE simulations. Finally, the characteristics of the constructed equivalent tri-state memristor are analyzed, and it is concluded that the amplitude, frequency and type of the input signal can affect the characteristics of the equivalent tri-state memristor. Predictions from this modeling were validated experimentally using Au/Nb2O5/Nb cross-point devices.

AB - We develop a tri-state memristive system based on composable binarized memristors, from both a dynamical systems construction to the development of in-house fabricated devices. Firstly, based on the SPICE model of the binary memristor, the series and parallel circuits of binary memristors are designed, and the characteristics of each circuit are analyzed in detail. Secondly, through the analysis of the connection direction and parameters of the two binary memristors, an effective method to construct a tri-state memristor is proposed, and verified using SPICE simulations. Finally, the characteristics of the constructed equivalent tri-state memristor are analyzed, and it is concluded that the amplitude, frequency and type of the input signal can affect the characteristics of the equivalent tri-state memristor. Predictions from this modeling were validated experimentally using Au/Nb2O5/Nb cross-point devices.

KW - Binary memristor

KW - LTspice

KW - series and parallel circuits

KW - tri-state memristor

UR - http://www.scopus.com/inward/record.url?scp=85163401787&partnerID=8YFLogxK

U2 - 10.1142/S0218127423300185

DO - 10.1142/S0218127423300185

M3 - Article

AN - SCOPUS:85163401787

SN - 0218-1274

VL - 33

JO - International Journal of Bifurcation and Chaos

JF - International Journal of Bifurcation and Chaos

IS - 7

M1 - 2330018

ER -

Tri-State Memristors Based on Composable Discrete Devices

Abstract

Access to Document

Other files and links

Fingerprint

Cite this