Tri-State Memristors Based on Composable Discrete Devices

Xiao Jing Li, Xiao Yuan Wang, Pu Li, Herbert H.C. Iu, Jason K. Eshraghian, Sanjoy Kumar Nandi, Shimul Kanti Nath, Robert G. Elliman

Research output: Contribution to journalArticlepeer-review

Abstract

We develop a tri-state memristive system based on composable binarized memristors, from both a dynamical systems construction to the development of in-house fabricated devices. Firstly, based on the SPICE model of the binary memristor, the series and parallel circuits of binary memristors are designed, and the characteristics of each circuit are analyzed in detail. Secondly, through the analysis of the connection direction and parameters of the two binary memristors, an effective method to construct a tri-state memristor is proposed, and verified using SPICE simulations. Finally, the characteristics of the constructed equivalent tri-state memristor are analyzed, and it is concluded that the amplitude, frequency and type of the input signal can affect the characteristics of the equivalent tri-state memristor. Predictions from this modeling were validated experimentally using Au/Nb2O5/Nb cross-point devices.

Original languageEnglish
Article number2330018
JournalInternational Journal of Bifurcation and Chaos
Volume33
Issue number7
DOIs
Publication statusPublished - 15 Jun 2023

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