Original language | English |
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Pages (from-to) | 2589-2596 |
Journal | IEEE Transactions on Electron Devices |
Volume | 58 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2011 |
Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable SiNx Passivation Stress
Tamara Fehlberg, Jason Milne, Gilberto A. Umana Membreno, S. Keller, U.K. Mishra, Brett Nener, Giacinta Parish
Research output: Contribution to journal › Article › peer-review
19
Citations
(Scopus)