Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques

T.V. Chandrasekhar Rao; Jarek Antoszewski; Lorenzo Faraone; S. Cristoloveanu; T.H.M. Nguyen; P. Gentil; N. Bresson; F. Allibert

doi:10.1063/1.2837841

Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques

T.V. Chandrasekhar Rao, Jarek Antoszewski, Lorenzo Faraone, S. Cristoloveanu, T.H.M. Nguyen, P. Gentil, N. Bresson, F. Allibert

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Abstract

We report on the nature of electrical transport in silicon-on-insulator layers, investigated using several techniques: the standard single magnetic field Hall effect, mobility spectrum analysis of the magnetic field-dependent Hall effect, and the pseudo-metal-oxide-semiconductor-field-effecttransistor technique. For moderate and strong inversion, electrical transport in the temperature range 77–300 K is dominated by a lone electron species with a mobility of 500-1000 cm²/Vs. A good correlation is noted between these methods.

Original language	English
Pages (from-to)	034503-1-034503-5
Journal	Journal of Applied Physics
Volume	103
Issue number	3
DOIs	https://doi.org/10.1063/1.2837841
Publication status	Published - 2008

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Chandrasekhar Rao, T. V., Antoszewski, J., Faraone, L., Cristoloveanu, S., Nguyen, T. H. M., Gentil, P., Bresson, N., & Allibert, F. (2008). Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques. Journal of Applied Physics, 103(3), 034503-1-034503-5. https://doi.org/10.1063/1.2837841

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title = "Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques",

abstract = "We report on the nature of electrical transport in silicon-on-insulator layers, investigated using several techniques: the standard single magnetic field Hall effect, mobility spectrum analysis of the magnetic field-dependent Hall effect, and the pseudo-metal-oxide-semiconductor-field-effecttransistor technique. For moderate and strong inversion, electrical transport in the temperature range 77–300 K is dominated by a lone electron species with a mobility of 500-1000 cm2/Vs. A good correlation is noted between these methods.",

author = "{Chandrasekhar Rao}, T.V. and Jarek Antoszewski and Lorenzo Faraone and S. Cristoloveanu and T.H.M. Nguyen and P. Gentil and N. Bresson and F. Allibert",

year = "2008",

doi = "10.1063/1.2837841",

language = "English",

volume = "103",

pages = "034503--1--034503--5",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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Chandrasekhar Rao, TV, Antoszewski, J , Faraone, L, Cristoloveanu, S, Nguyen, THM, Gentil, P, Bresson, N & Allibert, F 2008, 'Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques', Journal of Applied Physics, vol. 103, no. 3, pp. 034503-1-034503-5. https://doi.org/10.1063/1.2837841

Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques. / Chandrasekhar Rao, T.V.; Antoszewski, Jarek ; Faraone, Lorenzo et al.
In: Journal of Applied Physics, Vol. 103, No. 3, 2008, p. 034503-1-034503-5.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques

AU - Chandrasekhar Rao, T.V.

AU - Antoszewski, Jarek

AU - Faraone, Lorenzo

AU - Cristoloveanu, S.

AU - Nguyen, T.H.M.

AU - Gentil, P.

AU - Bresson, N.

AU - Allibert, F.

PY - 2008

Y1 - 2008

N2 - We report on the nature of electrical transport in silicon-on-insulator layers, investigated using several techniques: the standard single magnetic field Hall effect, mobility spectrum analysis of the magnetic field-dependent Hall effect, and the pseudo-metal-oxide-semiconductor-field-effecttransistor technique. For moderate and strong inversion, electrical transport in the temperature range 77–300 K is dominated by a lone electron species with a mobility of 500-1000 cm2/Vs. A good correlation is noted between these methods.

AB - We report on the nature of electrical transport in silicon-on-insulator layers, investigated using several techniques: the standard single magnetic field Hall effect, mobility spectrum analysis of the magnetic field-dependent Hall effect, and the pseudo-metal-oxide-semiconductor-field-effecttransistor technique. For moderate and strong inversion, electrical transport in the temperature range 77–300 K is dominated by a lone electron species with a mobility of 500-1000 cm2/Vs. A good correlation is noted between these methods.

U2 - 10.1063/1.2837841

DO - 10.1063/1.2837841

M3 - Article

SN - 0021-8979

VL - 103

SP - 034503-1-034503-5

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques

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