Transport measurements in silicon-on-insulator films: Comparison of Hall effect, mobility spectrum, and pseudo-metal-oxide-semiconductor-field-effect-transistor techniques

T.V. Chandrasekhar Rao, Jarek Antoszewski, Lorenzo Faraone, S. Cristoloveanu, T.H.M. Nguyen, P. Gentil, N. Bresson, F. Allibert

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    Abstract

    We report on the nature of electrical transport in silicon-on-insulator layers, investigated using several techniques: the standard single magnetic field Hall effect, mobility spectrum analysis of the magnetic field-dependent Hall effect, and the pseudo-metal-oxide-semiconductor-field-effecttransistor technique. For moderate and strong inversion, electrical transport in the temperature range 77–300 K is dominated by a lone electron species with a mobility of 500-1000 cm2/Vs. A good correlation is noted between these methods.
    Original languageEnglish
    Pages (from-to)034503-1-034503-5
    JournalJournal of Applied Physics
    Volume103
    Issue number3
    DOIs
    Publication statusPublished - 2008

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