TY - JOUR
T1 - Towards the atomic-scale fabrication of a silicon-based solid state quantum computer
AU - Simmons, Michelle Y.
AU - Schofield, Steven R.
AU - O'Brien, Jeremy L.
AU - Curson, Neil J.
AU - Oberbeck, Lars
AU - Hallam, T.
AU - Clark, Robert G.
PY - 2003/6/10
Y1 - 2003/6/10
N2 - The construction of a scalable quantum computer in silicon, using single phosphorus atoms as qubits, presents a significant technological challenge. This paper describes recent results from a 'bottom-up' strategy to incorporate individual phosphorus atoms in silicon with atomic precision using a combination of advanced scanning tunnelling lithography techniques followed by low temperature silicon molecular beam epitaxial overgrowth. To date we have demonstrated (i) placement of individual phosphorus molecules at predetermined sites in the silicon surface using a hydrogen resist strategy, (ii) spatially controlled phosphorus incorporation into the silicon surface, (iii) minimisation of surface segregation by low temperature silicon encapsulation and (iv) complete electrical activation of the donors. Whilst these results bode well for the fabrication of silicon devices with atomically precise dopant profiles, we discuss the challenges that remain before a few qubit P in Si quantum computer prototype can be realised.
AB - The construction of a scalable quantum computer in silicon, using single phosphorus atoms as qubits, presents a significant technological challenge. This paper describes recent results from a 'bottom-up' strategy to incorporate individual phosphorus atoms in silicon with atomic precision using a combination of advanced scanning tunnelling lithography techniques followed by low temperature silicon molecular beam epitaxial overgrowth. To date we have demonstrated (i) placement of individual phosphorus molecules at predetermined sites in the silicon surface using a hydrogen resist strategy, (ii) spatially controlled phosphorus incorporation into the silicon surface, (iii) minimisation of surface segregation by low temperature silicon encapsulation and (iv) complete electrical activation of the donors. Whilst these results bode well for the fabrication of silicon devices with atomically precise dopant profiles, we discuss the challenges that remain before a few qubit P in Si quantum computer prototype can be realised.
KW - Adsorption kinetics
KW - Electrical transport (conductivity, resistivity, mobility, etc.)
KW - Molecular beam epitaxy
KW - Phosphine
KW - Scanning tunneling microscopy
KW - Silicon
KW - Solid-gas interfaces
KW - Surface diffusion
UR - http://www.scopus.com/inward/record.url?scp=0037799833&partnerID=8YFLogxK
U2 - 10.1016/S0039-6028(03)00485-0
DO - 10.1016/S0039-6028(03)00485-0
M3 - Conference article
AN - SCOPUS:0037799833
VL - 532-535
SP - 1209
EP - 1218
JO - Surface Science
JF - Surface Science
SN - 0039-6028
T2 - Proceedings of the 7th International Conference on Nanometer
Y2 - 29 August 2002 through 31 August 2002
ER -