Towards a magnetoresistance characterization methodology for 1D nanostructured transistors

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1 Citation (Scopus)

Abstract

A novel approach to magnetoresistance characterization of ID-like nanoscaled transistor structures is presented. The proposed approach, which is based on the physical magnetoresistance effect (PMR), exploits the reality that carriers have non-discrete velocity distributions even when only a single carrier species is present.

Original languageEnglish
Title of host publication2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
EditorsFrancisco Gámiz, Viktor Sverdlov, Carlos Sampedro, Luca Donetti
Place of PublicationUnited States
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages125-128
Number of pages4
ISBN (Electronic)9781538648117
DOIs
Publication statusPublished - 3 May 2018
Event2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 - Granada, Spain
Duration: 19 Mar 201821 Mar 2018

Conference

Conference2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
CountrySpain
CityGranada
Period19/03/1821/03/18

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