Towards a magnetoresistance characterization methodology for 1D nanostructured transistors

Research output: Chapter in Book/Conference paperConference paper

Abstract

A novel approach to magnetoresistance characterization of ID-like nanoscaled transistor structures is presented. The proposed approach, which is based on the physical magnetoresistance effect (PMR), exploits the reality that carriers have non-discrete velocity distributions even when only a single carrier species is present.

Original languageEnglish
Title of host publication2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
EditorsFrancisco Gámiz, Viktor Sverdlov, Carlos Sampedro, Luca Donetti
Place of PublicationUnited States
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages125-128
Number of pages4
ISBN (Electronic)9781538648117
DOIs
Publication statusPublished - 3 May 2018
Event2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 - Granada, Spain
Duration: 19 Mar 201821 Mar 2018

Conference

Conference2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
CountrySpain
CityGranada
Period19/03/1821/03/18

Fingerprint

Magnetoresistance
Transistors
Velocity distribution

Cite this

Umana-Membreno, G. A., Akhavan, N. D., Antoszewski, J., Faraone, L., & Cristoloveanu, S. (2018). Towards a magnetoresistance characterization methodology for 1D nanostructured transistors. In F. Gámiz, V. Sverdlov, C. Sampedro, & L. Donetti (Eds.), 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 125-128). United States: IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ULIS.2018.8354750
Umana-Membreno, G. A. ; Akhavan, N. D. ; Antoszewski, J. ; Faraone, L. ; Cristoloveanu, S. / Towards a magnetoresistance characterization methodology for 1D nanostructured transistors. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). editor / Francisco Gámiz ; Viktor Sverdlov ; Carlos Sampedro ; Luca Donetti. United States : IEEE, Institute of Electrical and Electronics Engineers, 2018. pp. 125-128
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abstract = "A novel approach to magnetoresistance characterization of ID-like nanoscaled transistor structures is presented. The proposed approach, which is based on the physical magnetoresistance effect (PMR), exploits the reality that carriers have non-discrete velocity distributions even when only a single carrier species is present.",
keywords = "magnetoresistance, mobility, nanowires",
author = "Umana-Membreno, {G. A.} and Akhavan, {N. D.} and J. Antoszewski and L. Faraone and S. Cristoloveanu",
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doi = "10.1109/ULIS.2018.8354750",
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publisher = "IEEE, Institute of Electrical and Electronics Engineers",
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Umana-Membreno, GA, Akhavan, ND, Antoszewski, J, Faraone, L & Cristoloveanu, S 2018, Towards a magnetoresistance characterization methodology for 1D nanostructured transistors. in F Gámiz, V Sverdlov, C Sampedro & L Donetti (eds), 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). IEEE, Institute of Electrical and Electronics Engineers, United States, pp. 125-128, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, Granada, Spain, 19/03/18. https://doi.org/10.1109/ULIS.2018.8354750

Towards a magnetoresistance characterization methodology for 1D nanostructured transistors. / Umana-Membreno, G. A.; Akhavan, N. D.; Antoszewski, J.; Faraone, L.; Cristoloveanu, S.

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). ed. / Francisco Gámiz; Viktor Sverdlov; Carlos Sampedro; Luca Donetti. United States : IEEE, Institute of Electrical and Electronics Engineers, 2018. p. 125-128.

Research output: Chapter in Book/Conference paperConference paper

TY - GEN

T1 - Towards a magnetoresistance characterization methodology for 1D nanostructured transistors

AU - Umana-Membreno, G. A.

AU - Akhavan, N. D.

AU - Antoszewski, J.

AU - Faraone, L.

AU - Cristoloveanu, S.

PY - 2018/5/3

Y1 - 2018/5/3

N2 - A novel approach to magnetoresistance characterization of ID-like nanoscaled transistor structures is presented. The proposed approach, which is based on the physical magnetoresistance effect (PMR), exploits the reality that carriers have non-discrete velocity distributions even when only a single carrier species is present.

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KW - mobility

KW - nanowires

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M3 - Conference paper

SP - 125

EP - 128

BT - 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

A2 - Gámiz, Francisco

A2 - Sverdlov, Viktor

A2 - Sampedro, Carlos

A2 - Donetti, Luca

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - United States

ER -

Umana-Membreno GA, Akhavan ND, Antoszewski J, Faraone L, Cristoloveanu S. Towards a magnetoresistance characterization methodology for 1D nanostructured transistors. In Gámiz F, Sverdlov V, Sampedro C, Donetti L, editors, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). United States: IEEE, Institute of Electrical and Electronics Engineers. 2018. p. 125-128 https://doi.org/10.1109/ULIS.2018.8354750