Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering

K. Xu; Y. Huang; B. Chen; Y. Xia; Wen Lei; Z. Wang; Q. Wang; F. Wang; L. Yin; J. He

doi:10.1002/smll.201600521

Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering

K. Xu, Y. Huang, B. Chen, Y. Xia, Wen Lei, Z. Wang, Q. Wang, F. Wang, L. Yin, J. He

Research output: Contribution to journal › Article

31 Citations (Scopus)

Abstract

A study is conducted to present the design and fabrication of topgate HfS2 field-effect transistors (FETs) with high- k HfS2 dielectric. Top-gate HfS2 FETs with ultrathin HfO2 as dielectric are successfully demonstrated, with Al and Y as buffer layer. The on/off ratio of FETs is as high as 105, and the subthreshold swing (SS) is as low as 95 mV dec-1. Top-gate HfS2 FETs with 5 nm HfO2 dielectric can still exhibit excellent properties without any functionalization. Top-gate HfS2 phototransistor also exhibits excellent optoelectronic characteristics with high responsivity of 45 mA W-1. and fast response time of 650 ms.

Original language	English
Pages (from-to)	3106-3111
Number of pages	6
Journal	Small
DOIs	https://doi.org/10.1002/smll.201600521
Publication status	Published - 2016

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title = "Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering",

abstract = "A study is conducted to present the design and fabrication of topgate HfS2 field-effect transistors (FETs) with high- k HfS2 dielectric. Top-gate HfS2 FETs with ultrathin HfO2 as dielectric are successfully demonstrated, with Al and Y as buffer layer. The on/off ratio of FETs is as high as 105, and the subthreshold swing (SS) is as low as 95 mV dec-1. Top-gate HfS2 FETs with 5 nm HfO2 dielectric can still exhibit excellent properties without any functionalization. Top-gate HfS2 phototransistor also exhibits excellent optoelectronic characteristics with high responsivity of 45 mA W-1. and fast response time of 650 ms.",

author = "K. Xu and Y. Huang and B. Chen and Y. Xia and Wen Lei and Z. Wang and Q. Wang and F. Wang and L. Yin and J. He",

year = "2016",

doi = "10.1002/smll.201600521",

language = "English",

pages = "3106--3111",

journal = "Small",

issn = "1613-6810",

publisher = "Wiley-VCH Verlag GmbH & Co. KGaA",

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T1 - Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering

AU - Xu, K.

AU - Huang, Y.

AU - Chen, B.

AU - Xia, Y.

AU - Lei, Wen

AU - Wang, Z.

AU - Wang, Q.

AU - Wang, F.

AU - Yin, L.

AU - He, J.

PY - 2016

Y1 - 2016

N2 - A study is conducted to present the design and fabrication of topgate HfS2 field-effect transistors (FETs) with high- k HfS2 dielectric. Top-gate HfS2 FETs with ultrathin HfO2 as dielectric are successfully demonstrated, with Al and Y as buffer layer. The on/off ratio of FETs is as high as 105, and the subthreshold swing (SS) is as low as 95 mV dec-1. Top-gate HfS2 FETs with 5 nm HfO2 dielectric can still exhibit excellent properties without any functionalization. Top-gate HfS2 phototransistor also exhibits excellent optoelectronic characteristics with high responsivity of 45 mA W-1. and fast response time of 650 ms.

AB - A study is conducted to present the design and fabrication of topgate HfS2 field-effect transistors (FETs) with high- k HfS2 dielectric. Top-gate HfS2 FETs with ultrathin HfO2 as dielectric are successfully demonstrated, with Al and Y as buffer layer. The on/off ratio of FETs is as high as 105, and the subthreshold swing (SS) is as low as 95 mV dec-1. Top-gate HfS2 FETs with 5 nm HfO2 dielectric can still exhibit excellent properties without any functionalization. Top-gate HfS2 phototransistor also exhibits excellent optoelectronic characteristics with high responsivity of 45 mA W-1. and fast response time of 650 ms.

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DO - 10.1002/smll.201600521

M3 - Article

C2 - 27120487

SP - 3106

EP - 3111

JO - Small

JF - Small

SN - 1613-6810

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