Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering

K. Xu, Y. Huang, B. Chen, Y. Xia, Wen Lei, Z. Wang, Q. Wang, F. Wang, L. Yin, J. He

    Research output: Contribution to journalArticle

    31 Citations (Scopus)

    Abstract

    A study is conducted to present the design and fabrication of topgate HfS2 field-effect transistors (FETs) with high- k HfS2 dielectric. Top-gate HfS2 FETs with ultrathin HfO2 as dielectric are successfully demonstrated, with Al and Y as buffer layer. The on/off ratio of FETs is as high as 105, and the subthreshold swing (SS) is as low as 95 mV dec-1. Top-gate HfS2 FETs with 5 nm HfO2 dielectric can still exhibit excellent properties without any functionalization. Top-gate HfS2 phototransistor also exhibits excellent optoelectronic characteristics with high responsivity of 45 mA W-1. and fast response time of 650 ms.
    Original languageEnglish
    Pages (from-to)3106-3111
    Number of pages6
    JournalSmall
    DOIs
    Publication statusPublished - 2016

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