Abstract
A study is conducted to present the design and fabrication of topgate HfS2 field-effect transistors (FETs) with high- k HfS2 dielectric. Top-gate HfS2 FETs with ultrathin HfO2 as dielectric are successfully demonstrated, with Al and Y as buffer layer. The on/off ratio of FETs is as high as 105, and the subthreshold swing (SS) is as low as 95 mV dec-1. Top-gate HfS2 FETs with 5 nm HfO2 dielectric can still exhibit excellent properties without any functionalization. Top-gate HfS2 phototransistor also exhibits excellent optoelectronic characteristics with high responsivity of 45 mA W-1. and fast response time of 650 ms.
Original language | English |
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Pages (from-to) | 3106-3111 |
Number of pages | 6 |
Journal | Small |
DOIs | |
Publication status | Published - 2016 |