Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures

Wei Guo, Somak Mitra, Jiean Jiang, Houqiang Xu, Moheb Sheikhi, Haiding Sun, Kangkai Tian, Zi Hui Zhang, Haibo Jiang, Iman S. Roqan, Xiaohang Li, Jichun Ye

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


The 2D band diagram comprising out-of-plane potentials has been ubiquitously utilized for III-nitride heterostructures. Here, we propose the 3D band diagram based on unambiguous evidences in luminescence and carrier dynamics for lateral polarity junction quantum wells: although electrons and holes are separated out-of-plane in quantum wells by polarization, different band diagram heights lead to secondary carrier injection in-plane, causing electrons to transport from the III- to N-polar domains to recombine with holes therein with large wavefunction overlap. We also show that utilization of the 3D band diagram can be extended to single-polarity structures to analyze carrier transport and dynamics, providing new dimensions for accurate optical device design.

Original languageEnglish
Pages (from-to)1058-1062
Number of pages5
Issue number8
Publication statusPublished - 1 Jan 2019


Dive into the research topics of 'Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures'. Together they form a unique fingerprint.

Cite this