Thin Film Materials Characterization Using TE Modes Cavity

Jean-Michel Le Floch, F. Houndonougbo, V. Madrangeas, D. Cros, M. Guilloux-Viry, W. Peng

    Research output: Contribution to journalArticlepeer-review

    20 Citations (Scopus)


    This paper presents the characterization of thin film dielectric materials, labeled as LW 51 KTN and LW 48 KTN. The technique can be applied for lower temperatures. We briefly present the material process of both thin films, then the dielectric characterization using a conventional TE mode cavity method [1-5] with the help of a rigorous simulation software based on the method of lines [6]. We finally measured high permittivity and low loss-tangent materials within the microwave frequency range from 12 to 15 GHz.
    Original languageEnglish
    Pages (from-to)549-559
    JournalJournal of Electromagnetic Waves and Applications
    Issue number4
    Publication statusPublished - 2009


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