Two-dimensional electron gas (2DEG) transport in Al0.3Ga0.7N/AlN/GaN heterostructures has been studied using magnetic-field dependent Hall-effect measurements and advanced mobility spectrum analysis techniques over the temperature range from 95 K to 300 K. It is shown that electronic transport is due to a single well-defined 2DEG species, with room-temperature sheet concentration and average mobility of 9.3×1012 cm-2 and 1,880 cm2/Vs, respectively. No parasitic conduction through the bulk GaN layer was detected. Importantly, it is shown that the 2DEG exhibits an approximately Gaussian mobility distribution, the linewidth of which broadens with increasing temperature. This is the first reported observation of thermal broadening effects in the 2DEG mobility distribution.
|Title of host publication||2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010|
|Number of pages||4|
|Publication status||Published - 15 Dec 2010|
|Event||2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain|
Duration: 14 Sep 2010 → 16 Sep 2010
|Conference||2010 European Solid State Device Research Conference, ESSDERC 2010|
|Period||14/09/10 → 16/09/10|