Thermal broadening of the electron mobility distribution in FD-SOI MOSFETs

G. A. Umana-Membreno, N. D. Akhavan, J. Antoszewski, L. Faraone, S. Cristoloveanu

Research output: Chapter in Book/Conference paperConference paperpeer-review

Abstract

This work presents results of a study of electronic transport in state-of-the-art SOI transistors. Geometrical magnetoresistance measurements, performed at magnetic field intensities up to 15 T, and high-resolution mobility spectrum analysis were employed to characterise the mobility distribution of electrons in the inversion layer of fully-depleted silicon-on-insulator nMOS transistors. The results reveal a broad room-temperature electron mobility distribution that significantly departs from the ideal single discrete carrier case. At temperatures below 60 K, the linewidth of the distribution is shown to become significantly narrower, approaching a delta-like mobility function. To the best of our knowledge, electron mobility distributions in Si-based devices have not been previously studied nor resolved in such detail.

Original languageEnglish
Title of host publication2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
PublisherIEEE, Institute of Electrical and Electronics Engineers
ISBN (Electronic)9781728187655
DOIs
Publication statusPublished - 1 Sep 2020
Event2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020 - Caen, France
Duration: 1 Sep 202030 Sep 2020

Conference

Conference2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020
Country/TerritoryFrance
CityCaen
Period1/09/2030/09/20

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