Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures

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    Abstract

    © 2015, The Minerals, Metals & Materials Society. We report a theoretical study of mercury cadmium telluride (HgCdTe) unipolar n-type/barrier/n-type (nBn) detectors for midwave infrared (MWIR) applications at elevated temperatures. The results obtained indicate that the composition, doping, and thickness of the barrier layer in MWIR HgCdTe nBn detectors can be optimized to yield performance levels comparable with those of ideal HgCdTe p–n photodiodes. It is also shown that introduction of an additional barrier at the back contact layer of the detector structure (nBnn+) leads to substantial suppression of the Auger generation–recombination (GR) mechanism; this results in an order-of-magnitude reduction in the dark current level compared with conventional nBn or p–n junction-based detectors, thus enabling background-limited detector operation above 200 K.
    Original languageEnglish
    Pages (from-to)3044-3055
    JournalJournal of Electronic Materials
    Volume44
    Issue number9
    Early online date11 Apr 2015
    DOIs
    Publication statusPublished - Sep 2015

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