The influence of the Franz-Keldysh effect on the electron diffusion length in p-type GaN determined using the spectral photocurrent technique

Danny Wee; Giacinta Parish; Brett Nener

doi:10.1063/1.4746740

The influence of the Franz-Keldysh effect on the electron diffusion length in p-type GaN determined using the spectral photocurrent technique

Graduate Research School

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	044501-1 to 044501-6
Journal	Journal of Applied Physics
Volume	112
Issue number	4
DOIs	https://doi.org/10.1063/1.4746740
Publication status	Published - 2012

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10.1063/1.4746740

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title = "The influence of the Franz-Keldysh effect on the electron diffusion length in p-type GaN determined using the spectral photocurrent technique",

author = "Danny Wee and Giacinta Parish and Brett Nener",

year = "2012",

doi = "10.1063/1.4746740",

language = "English",

volume = "112",

pages = "044501--1 to 044501--6",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - The influence of the Franz-Keldysh effect on the electron diffusion length in p-type GaN determined using the spectral photocurrent technique

AU - Wee, Danny

AU - Parish, Giacinta

AU - Nener, Brett

PY - 2012

Y1 - 2012

U2 - 10.1063/1.4746740

DO - 10.1063/1.4746740

M3 - Article

SN - 0021-8979

VL - 112

SP - 044501-1 to 044501-6

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -