The electron-distribution in silicon - a comparison between experiment and theory

Research output: Contribution to journalArticle

53 Citations (Scopus)
Original languageEnglish
Pages (from-to)271-281
Number of pages11
JournalActa Crystallographica Section A
Volume42
DOIs
Publication statusPublished - 1 Jul 1986

Cite this

@article{27dfef78350d4b0f8a8232dc06667c30,
title = "The electron-distribution in silicon - a comparison between experiment and theory",
author = "Mark Spackman",
year = "1986",
month = "7",
day = "1",
doi = "10.1107/S0108767386099312",
language = "English",
volume = "42",
pages = "271--281",
journal = "Acta Crystallographica. Section A: Foundations of Crystallography",
issn = "0108-7673",
publisher = "MUNKSGAARD INT PUBL LTD",

}

The electron-distribution in silicon - a comparison between experiment and theory. / Spackman, Mark.

In: Acta Crystallographica Section A, Vol. 42, 01.07.1986, p. 271-281.

Research output: Contribution to journalArticle

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AU - Spackman, Mark

PY - 1986/7/1

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DO - 10.1107/S0108767386099312

M3 - Article

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EP - 281

JO - Acta Crystallographica. Section A: Foundations of Crystallography

JF - Acta Crystallographica. Section A: Foundations of Crystallography

SN - 0108-7673

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