The Corbino Pseudo-MOSFET on SOI: Measurements, Model, and Applications

S. Cristoloveanue; T.V. Chandrasekhar Rao; Q.T. Nguyen; Jarek Antoszewski; H. Hovel; P. Gentil; Lorenzo Faraone

doi:10.1109/TED.2008.2011573

The Corbino Pseudo-MOSFET on SOI: Measurements, Model, and Applications

S. Cristoloveanue, T.V. Chandrasekhar Rao, Q.T. Nguyen, Jarek Antoszewski, H. Hovel, P. Gentil, Lorenzo Faraone

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We propose the combination of magnetoresistance(MR) and Pseudo-MOSFET (Ψ-MOSFET) measurements as animproved method for the characterization of silicon-on-insulator(SOI) materials. Measurements were performed on ultrathin SOIΨ-MOSFETs with Corbino geometry by applying high magneticfield and substrate biasing. Severalmodels and extraction methodsare developed and compared for an accurate evaluation of electronmobility. In particular, the series resistance effect is removed byusing appropriate corrections. The MR mobility can be determinedat low or variable electric field. The MR mobility behavioris investigated as a function of effective electric field, temperature,and film thickness. The correlation between the MR mobility andeffective mobility, determined in Ψ-MOSFETs at zero magneticfield, enables a detailed analysis of the electron transport andscattering mechanisms in the silicon thin film.

Original language	English
Pages (from-to)	474-482
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	3
DOIs	https://doi.org/10.1109/TED.2008.2011573
Publication status	Published - 2009

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abstract = "We propose the combination of magnetoresistance(MR) and Pseudo-MOSFET (Ψ-MOSFET) measurements as animproved method for the characterization of silicon-on-insulator(SOI) materials. Measurements were performed on ultrathin SOIΨ-MOSFETs with Corbino geometry by applying high magneticfield and substrate biasing. Severalmodels and extraction methodsare developed and compared for an accurate evaluation of electronmobility. In particular, the series resistance effect is removed byusing appropriate corrections. The MR mobility can be determinedat low or variable electric field. The MR mobility behavioris investigated as a function of effective electric field, temperature,and film thickness. The correlation between the MR mobility andeffective mobility, determined in Ψ-MOSFETs at zero magneticfield, enables a detailed analysis of the electron transport andscattering mechanisms in the silicon thin film.",

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AU - Cristoloveanue, S.

AU - Chandrasekhar Rao, T.V.

AU - Nguyen, Q.T.

AU - Antoszewski, Jarek

AU - Hovel, H.

AU - Gentil, P.

AU - Faraone, Lorenzo

PY - 2009

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AB - We propose the combination of magnetoresistance(MR) and Pseudo-MOSFET (Ψ-MOSFET) measurements as animproved method for the characterization of silicon-on-insulator(SOI) materials. Measurements were performed on ultrathin SOIΨ-MOSFETs with Corbino geometry by applying high magneticfield and substrate biasing. Severalmodels and extraction methodsare developed and compared for an accurate evaluation of electronmobility. In particular, the series resistance effect is removed byusing appropriate corrections. The MR mobility can be determinedat low or variable electric field. The MR mobility behavioris investigated as a function of effective electric field, temperature,and film thickness. The correlation between the MR mobility andeffective mobility, determined in Ψ-MOSFETs at zero magneticfield, enables a detailed analysis of the electron transport andscattering mechanisms in the silicon thin film.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

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The Corbino Pseudo-MOSFET on SOI: Measurements, Model, and Applications

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