This paper shows the application of simple dc techniques to the temperature-dependent characterization of AlGaN/GaN HEMTs in terms of the following: 1) thermal resistance and 2) ohmic series resistance (at low drain bias). Despite their simplicity, these measurement techniques are shown to give valuable information about the device behavior over a wide range of ambient/channel temperatures. The experimental results are validated by comparison with independent measurements and numerical simulations.
|Journal||IEEE Transactions on Device and Materials Reliability|
|Publication status||Published - 2008|