Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances

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This paper shows the application of simple dc techniques to the temperature-dependent characterization of AlGaN/GaN HEMTs in terms of the following: 1) thermal resistance and 2) ohmic series resistance (at low drain bias). Despite their simplicity, these measurement techniques are shown to give valuable information about the device behavior over a wide range of ambient/channel temperatures. The experimental results are validated by comparison with independent measurements and numerical simulations.
Original languageEnglish
Pages (from-to)255-264
JournalIEEE Transactions on Device and Materials Reliability
Issue number2
Publication statusPublished - 2008


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