Temperature dependence of InGaN/GaN multiple quantum well based high efficiency solar cell

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3124-3129
Journal	Solar Energy Materials and Solar Cells
Volume	95
DOIs	https://doi.org/10.1016/j.solmat.2011.07.001
Publication status	Published - 2011

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@article{9c21bf8b31ee46f79c7b00b6c8c245b3,

title = "Temperature dependence of InGaN/GaN multiple quantum well based high efficiency solar cell",

author = "Asghar Asgari and K. Khalili",

year = "2011",

doi = "10.1016/j.solmat.2011.07.001",

language = "English",

volume = "95",

pages = "3124--3129",

journal = "Solar Energy Materials & Solar Cells",

issn = "0165-1633",

publisher = "Elsevier",

}

TY - JOUR

T1 - Temperature dependence of InGaN/GaN multiple quantum well based high efficiency solar cell

AU - Asgari, Asghar

AU - Khalili, K.

PY - 2011

Y1 - 2011

U2 - 10.1016/j.solmat.2011.07.001

DO - 10.1016/j.solmat.2011.07.001

M3 - Article

VL - 95

SP - 3124

EP - 3129

JO - Solar Energy Materials & Solar Cells

JF - Solar Energy Materials & Solar Cells

SN - 0165-1633

ER -