Technical noise in K-band low-noise cryogenic amplifier

Stephen Parker

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)


    © 2016 The Institution of Engineering and Technology. The performance of a 15-29 GHz low-noise high-electron-mobility transistor amplifier at room and cryogenic temperatures is reported. The close-to-carrier technical noise is measured for frequency offsets from 100 mHz to 100 kHz and the effect of adjusting the DC power biasing is investigated. An order of magnitude improvement in intrinsic phase noise is achieved by optimising the bias settings away from manufacturer specifications, giving a single-sideband phase noise power spectral density at 1 Hz offset of-100 dBc/Hz and-105 dBc/Hz for a 26.6 GHz carrier at room temperature and 6.5 K, respectively.
    Original languageEnglish
    Pages (from-to)539-541
    Number of pages3
    JournalElectronics Letters
    Issue number7
    Early online date25 Feb 2016
    Publication statusPublished - 1 Apr 2016


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