Synthesis of buried silicon nitride layer in SiC by nitrogen implantation

Alexandra Suvorova, A.V. Suvorov

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Ion beam synthesis has been successfully employed to produce a buried silicon nitride layer in silicon carbide. The elemental distributions, compositional and structural variations in the implanted samples have been studied using a combination of secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The studies revealed that the buried layer is composed of alpha-Si3N4 nanocrystallites after implantation at 650 degrees C and 1100 degrees C. It was found that the deviation from perfect crystallinity of the SiC layer above the buried nitride layer is less than 8%. (C) 2007 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)217-221
JournalNuclear Instruments and Methods in Physics Research B
Publication statusPublished - 2007


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