TY - JOUR
T1 - Synthesis of buried silicon nitride layer in SiC by nitrogen implantation
AU - Suvorova, Alexandra
AU - Suvorov, A.V.
PY - 2007
Y1 - 2007
N2 - Ion beam synthesis has been successfully employed to produce a buried silicon nitride layer in silicon carbide. The elemental distributions, compositional and structural variations in the implanted samples have been studied using a combination of secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The studies revealed that the buried layer is composed of alpha-Si3N4 nanocrystallites after implantation at 650 degrees C and 1100 degrees C. It was found that the deviation from perfect crystallinity of the SiC layer above the buried nitride layer is less than 8%. (C) 2007 Elsevier B.V. All rights reserved.
AB - Ion beam synthesis has been successfully employed to produce a buried silicon nitride layer in silicon carbide. The elemental distributions, compositional and structural variations in the implanted samples have been studied using a combination of secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The studies revealed that the buried layer is composed of alpha-Si3N4 nanocrystallites after implantation at 650 degrees C and 1100 degrees C. It was found that the deviation from perfect crystallinity of the SiC layer above the buried nitride layer is less than 8%. (C) 2007 Elsevier B.V. All rights reserved.
U2 - 10.1016/j.nimb.2007.01.004
DO - 10.1016/j.nimb.2007.01.004
M3 - Article
SN - 0168-583X
VL - 257
SP - 217
EP - 221
JO - Nuclear Instruments and Methods in Physics Research B
JF - Nuclear Instruments and Methods in Physics Research B
ER -