TY - JOUR
T1 - Synthesis of β-Ketoiminato Copper(II) Complexes and Their Use in Copper Deposition
AU - Preuß, Andrea
AU - Korb, Marcus
AU - Rüffer, Tobias
AU - Bankwitz, Jörn
AU - Georgi, Colin
AU - Jakob, Alexander
AU - Schulz, Stefan E.
AU - Lang, Heinrich
PY - 2020/7/15
Y1 - 2020/7/15
N2 - The template synthesis of ethylenediamine (1) with 2-acetylcyclopentanone (2) and [Cu(OAc)2·H2O] (5) produced [Cu(1-(2-cC5H6(O))C(Me)NCH2)2)] (6) in 82 % yield. Reaction of 5 with bis(benzoylacetone)diethylenetriamine (7, = LH)[1] gave [Cu(μ-OAc)(L)(H2O)]2 (8). The solid-state structures of 6 and 8 were determined confirming that 8 possesses intra- and intermolecular hydrogen bonds resulting in a dimer formation. The thermal behavior of 6–8 was studied by TG and TG-MS. Under oxygen CuO was formed, whereas under Ar Cu/Cu2O (6) or Cu (8) was obtained. Complex 6 was used as CVD precursor for Cu and Cu-oxide deposition (substrate temp., 400–500 °C, N2, 60 mL·min–1; O2, 60 mL·min–1; pressure, 0.87–1.5 mbar). The as-obtained deposits show separated particles of different appearance at the substrate surface as evidenced by SEM. Non-volatile 8 was applied as spin-coating precursor for Cu and CuO formation [conc. 0.25 mol·L–1; volume 0.2 mL; 3000 rpm; depos. time 2 min; heating rate 50 K·min–1; holding time 60 min (Ar), 120 min (air) at 800 °C]. The samples on silicon consist of granulated particles (Ar) or are non-dense with a grainy topography (air). EDX and XPS measurements confirmed the formation of Cu (Ar) or CuO (O2) with up to 13 mol-% C impurity.
AB - The template synthesis of ethylenediamine (1) with 2-acetylcyclopentanone (2) and [Cu(OAc)2·H2O] (5) produced [Cu(1-(2-cC5H6(O))C(Me)NCH2)2)] (6) in 82 % yield. Reaction of 5 with bis(benzoylacetone)diethylenetriamine (7, = LH)[1] gave [Cu(μ-OAc)(L)(H2O)]2 (8). The solid-state structures of 6 and 8 were determined confirming that 8 possesses intra- and intermolecular hydrogen bonds resulting in a dimer formation. The thermal behavior of 6–8 was studied by TG and TG-MS. Under oxygen CuO was formed, whereas under Ar Cu/Cu2O (6) or Cu (8) was obtained. Complex 6 was used as CVD precursor for Cu and Cu-oxide deposition (substrate temp., 400–500 °C, N2, 60 mL·min–1; O2, 60 mL·min–1; pressure, 0.87–1.5 mbar). The as-obtained deposits show separated particles of different appearance at the substrate surface as evidenced by SEM. Non-volatile 8 was applied as spin-coating precursor for Cu and CuO formation [conc. 0.25 mol·L–1; volume 0.2 mL; 3000 rpm; depos. time 2 min; heating rate 50 K·min–1; holding time 60 min (Ar), 120 min (air) at 800 °C]. The samples on silicon consist of granulated particles (Ar) or are non-dense with a grainy topography (air). EDX and XPS measurements confirmed the formation of Cu (Ar) or CuO (O2) with up to 13 mol-% C impurity.
KW - Copper
KW - Solid-state structures
KW - Spin-coating, Chemical vapor deposition
KW - β-Ketoiminato
UR - http://www.scopus.com/inward/record.url?scp=85078751540&partnerID=8YFLogxK
U2 - 10.1002/zaac.201900208
DO - 10.1002/zaac.201900208
M3 - Article
AN - SCOPUS:85078751540
SN - 0044-2313
VL - 646
SP - 670
EP - 680
JO - Zeitschrift fur Anorganische und Allgemeine Chemie
JF - Zeitschrift fur Anorganische und Allgemeine Chemie
IS - 13
ER -