TY - JOUR
T1 - Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes
AU - Pulfrey, D.L.
AU - Parish, Giacinta
AU - Wee, D.
AU - Nener, Brett
PY - 2005
Y1 - 2005
N2 - It is postulated that donor-like nitrogen vacancies, caused by the sputtering of a Schottky-barrier metal onto p-type gallium nitride, diffuse into the GaN and form a surface layer in which both the minority-carrier lifetime and mobility are drastically reduced. Such a damaged surface layer is shown to reduce the responsivity of p-GaN Schottky-barrier photodiodes, thereby offering an explanation for the responsivity values in the range of 0.03-0.04 A/W that have been measured in experimental ITO/p-GaN devices. On making allowance for the damaged surface layer, an electron diffusion length of around 300 nm can be inferred for the undamaged p-GaN region. (C) 2005 Elsevier Ltd. All rights reserved.
AB - It is postulated that donor-like nitrogen vacancies, caused by the sputtering of a Schottky-barrier metal onto p-type gallium nitride, diffuse into the GaN and form a surface layer in which both the minority-carrier lifetime and mobility are drastically reduced. Such a damaged surface layer is shown to reduce the responsivity of p-GaN Schottky-barrier photodiodes, thereby offering an explanation for the responsivity values in the range of 0.03-0.04 A/W that have been measured in experimental ITO/p-GaN devices. On making allowance for the damaged surface layer, an electron diffusion length of around 300 nm can be inferred for the undamaged p-GaN region. (C) 2005 Elsevier Ltd. All rights reserved.
U2 - 10.1016/j.sse.2005.09.013
DO - 10.1016/j.sse.2005.09.013
M3 - Article
SN - 0038-1101
VL - 49
SP - 1969
EP - 1973
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 12
ER -