TY - JOUR
T1 - Suggestions for the Development of GaN-Based Photodiodes
AU - Pulfrey, D.L.
AU - Nener, Brett
PY - 1998
Y1 - 1998
N2 - A simple, analytical model is used to investigate the steady-state responsivity of GaN-based, p-i-n photodiodes. The trends exhibited by recent experimental data are reproduced and, in so doing, deficiencies in present GaN material, and inadequacies in electrical- and optical-parameter specification, are identified. The model is used to suggest that heterojunction diodes, fabricated from materials in the AlxGa1-xN ternary system, could produce practically important, specialized, UV photodetectors. (C) 1998 Elsevier Science Ltd. All rights reserved.
AB - A simple, analytical model is used to investigate the steady-state responsivity of GaN-based, p-i-n photodiodes. The trends exhibited by recent experimental data are reproduced and, in so doing, deficiencies in present GaN material, and inadequacies in electrical- and optical-parameter specification, are identified. The model is used to suggest that heterojunction diodes, fabricated from materials in the AlxGa1-xN ternary system, could produce practically important, specialized, UV photodetectors. (C) 1998 Elsevier Science Ltd. All rights reserved.
U2 - 10.1016/S0038-1101(98)00150-6
DO - 10.1016/S0038-1101(98)00150-6
M3 - Article
VL - 42
SP - 1731
EP - 1736
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -