Suggestions for the Development of GaN-Based Photodiodes

D.L. Pulfrey, Brett Nener

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A simple, analytical model is used to investigate the steady-state responsivity of GaN-based, p-i-n photodiodes. The trends exhibited by recent experimental data are reproduced and, in so doing, deficiencies in present GaN material, and inadequacies in electrical- and optical-parameter specification, are identified. The model is used to suggest that heterojunction diodes, fabricated from materials in the AlxGa1-xN ternary system, could produce practically important, specialized, UV photodetectors. (C) 1998 Elsevier Science Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)1731-1736
JournalSolid-State Electronics
Volume42
DOIs
Publication statusPublished - 1998

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