Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates

N. A. Suvorova; A. H. Mueller; A. A. Suvorova; M. Saunders; E. A. Irene

Study of interface formation of (Ba,Sr)TiO₃ thin films grown by rf sputter deposition on bare Si and thermal SiO₂/Si substrates

N. A. Suvorova, A. H. Mueller, A. A. Suvorova, M. Saunders, E. A. Irene

Centre for Microscopy, Characterisation & Analysis

Research output: Contribution to journal › Conference article › peer-review

Abstract

(Ba,Sr)TiO₃ (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si. Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO₂ layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO₂ films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO₂. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density D_it of an order of magnitude was observed for oxidized Si substrates.

Original language	English
Pages (from-to)	183-188
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	747
Publication status	Published - 2003
Event	Crystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics - Boston, MA, United States Duration: 2 Dec 2002 → 4 Dec 2002

Cite this

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title = "Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates",

abstract = "(Ba,Sr)TiO3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si. Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO2 layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO2 films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density Dit of an order of magnitude was observed for oxidized Si substrates.",

author = "Suvorova, {N. A.} and Mueller, {A. H.} and Suvorova, {A. A.} and M. Saunders and Irene, {E. A.}",

year = "2003",

language = "English",

volume = "747",

pages = "183--188",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Crystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics ; Conference date: 02-12-2002 Through 04-12-2002",

}

TY - JOUR

T1 - Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates

AU - Suvorova, N. A.

AU - Mueller, A. H.

AU - Suvorova, A. A.

AU - Saunders, M.

AU - Irene, E. A.

PY - 2003

Y1 - 2003

N2 - (Ba,Sr)TiO3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si. Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO2 layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO2 films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density Dit of an order of magnitude was observed for oxidized Si substrates.

AB - (Ba,Sr)TiO3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si. Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO2 layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO2 films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density Dit of an order of magnitude was observed for oxidized Si substrates.

UR - http://www.scopus.com/inward/record.url?scp=0042163171&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0042163171

SN - 0272-9172

VL - 747

SP - 183

EP - 188

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Crystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics

Y2 - 2 December 2002 through 4 December 2002

ER -

Study of interface formation of (Ba,Sr)TiO₃ thin films grown by rf sputter deposition on bare Si and thermal SiO₂/Si substrates

Abstract

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