Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates

N. A. Suvorova, A. H. Mueller, A. A. Suvorova, M. Saunders, E. A. Irene

Research output: Contribution to journalConference articlepeer-review

Abstract

(Ba,Sr)TiO3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si, Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO2 layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO2 films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density Dit of an order of magnitude was observed for oxidized Si substrates.

Original languageEnglish
Pages (from-to)373-378
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume745
DOIs
Publication statusPublished - 2002
EventNovel Materials and Processes for Advanced CMOS - Boston, MA, United States
Duration: 2 Dec 20024 Dec 2002

Fingerprint

Dive into the research topics of 'Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates'. Together they form a unique fingerprint.

Cite this