Abstract
(Ba,Sr)TiO3 (BST) thin films were deposited by ion beam sputtering on both bare and oxidized Si, Spectroscopic ellipsometry (SE) model results have shown an increase in the SiO2 layer thickness for bare substrates and those with a 1 nm initial oxide layer, and a decrease for thicker (3.5 nm) initial SiO2 films. This result was confirmed by high resolution electron microscopy (HREM) analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. From high-frequency capacitance-voltage (C-V) analysis, a decrease in the interface trap density Dit of an order of magnitude was observed for oxidized Si substrates.
Original language | English |
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Pages (from-to) | 373-378 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 745 |
DOIs | |
Publication status | Published - 2002 |
Event | Novel Materials and Processes for Advanced CMOS - Boston, MA, United States Duration: 2 Dec 2002 → 4 Dec 2002 |