Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate

Jarosław Wróbel; Kacper Grodecki; Djalal Benyahia; Krzysztof Murawski; Krystian Michalczewski; Justyna Grzonka; Jacek Boguski; Kinga Gorczyca; Gilberto A. Umana-Membreno; Lukasz Kubiszyn; Artur Kebłowski; Paweł Piotr Michałowski; Emilia Gomółka; Piotr Martyniuk; Józef Piotrowski; Antoni Rogalski

doi:10.1117/12.2503624

Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate

Jarosław Wróbel, Kacper Grodecki, Djalal Benyahia, Krzysztof Murawski, Krystian Michalczewski, Justyna Grzonka, Jacek Boguski, Kinga Gorczyca, Gilberto A. Umana-Membreno, Lukasz Kubiszyn, Artur Kebłowski, Paweł Piotr Michałowski, Emilia Gomółka, Piotr Martyniuk, Józef Piotrowski, Antoni Rogalski

School of Engineering

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

4 Citations (Scopus)

Abstract

The highly Be-doped InAs layer has been grown on semi-insulating GaAs (100) substrate by Molecular Beam Epitaxy. Very good quality of the layer has been attested by high resolution scanning electron microscope (HR-SEM), X-ray diffraction (XRD) and the Raman spectra. The parallel and perpendicular residual strain are determined to be - 1.17 × 10^-3, and 1.12 × 10^-3, respectively. Moreover, the absorbance (ABS) and photoluminescence (PL) spectra were collected in order to estimate the bandgap narrowing. The 10 meV bandgap shrinking for 1.7×10¹⁸ cm^-3 acceptor concentration suggests necessity of reexamining the Jain et al model [Jain, S. C., et al. - JAP 68(7): 3747-3749] in the context of actual values of InAs valence-bands effective-masses.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	Przemyslaw Struk, Tadeusz Pustelny
Publisher	SPIE - International Society for Optical Engineering
Volume	10830
ISBN (Print)	9781510622722
DOIs	https://doi.org/10.1117/12.2503624
Publication status	Published - 1 Jan 2018
Event	13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, IOS 2018 - Szczyrk, Poland Duration: 26 Feb 2018 → 2 Mar 2018

Conference

Conference	13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, IOS 2018
Country/Territory	Poland
City	Szczyrk
Period	26/02/18 → 2/03/18

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10.1117/12.2503624

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Wróbel, J., Grodecki, K., Benyahia, D., Murawski, K., Michalczewski, K., Grzonka, J., Boguski, J., Gorczyca, K., Umana-Membreno, G. A., Kubiszyn, L., Kebłowski, A., Michałowski, P. P., Gomółka, E., Martyniuk, P., Piotrowski, J., & Rogalski, A. (2018). Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate. In P. Struk, & T. Pustelny (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 10830). Article 108300S SPIE - International Society for Optical Engineering. https://doi.org/10.1117/12.2503624

Wróbel, Jarosław ; Grodecki, Kacper ; Benyahia, Djalal et al. / Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate. Proceedings of SPIE - The International Society for Optical Engineering. editor / Przemyslaw Struk ; Tadeusz Pustelny. Vol. 10830 SPIE - International Society for Optical Engineering, 2018.

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title = "Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate",

abstract = "The highly Be-doped InAs layer has been grown on semi-insulating GaAs (100) substrate by Molecular Beam Epitaxy. Very good quality of the layer has been attested by high resolution scanning electron microscope (HR-SEM), X-ray diffraction (XRD) and the Raman spectra. The parallel and perpendicular residual strain are determined to be - 1.17 × 10-3, and 1.12 × 10-3, respectively. Moreover, the absorbance (ABS) and photoluminescence (PL) spectra were collected in order to estimate the bandgap narrowing. The 10 meV bandgap shrinking for 1.7×1018 cm-3 acceptor concentration suggests necessity of reexamining the Jain et al model [Jain, S. C., et al. - JAP 68(7): 3747-3749] in the context of actual values of InAs valence-bands effective-masses.",

keywords = "bandgap narrowing, Be doping, InAs, MBE, photoluminescence, Raman spectroscopy, strain, stress, XRD",

author = "Jaros{\l}aw Wr{\'o}bel and Kacper Grodecki and Djalal Benyahia and Krzysztof Murawski and Krystian Michalczewski and Justyna Grzonka and Jacek Boguski and Kinga Gorczyca and Umana-Membreno, \{Gilberto A.\} and Lukasz Kubiszyn and Artur Keb{\l}owski and Micha{\l}owski, \{Pawe{\l} Piotr\} and Emilia Gom{\'o}{\l}ka and Piotr Martyniuk and J{\'o}zef Piotrowski and Antoni Rogalski",

year = "2018",

month = jan,

day = "1",

doi = "10.1117/12.2503624",

language = "English",

isbn = "9781510622722",

volume = "10830",

editor = "Przemyslaw Struk and Tadeusz Pustelny",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE - International Society for Optical Engineering",

note = "13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, IOS 2018 ; Conference date: 26-02-2018 Through 02-03-2018",

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Wróbel, J, Grodecki, K, Benyahia, D, Murawski, K, Michalczewski, K, Grzonka, J, Boguski, J, Gorczyca, K, Umana-Membreno, GA, Kubiszyn, L, Kebłowski, A, Michałowski, PP, Gomółka, E, Martyniuk, P, Piotrowski, J & Rogalski, A 2018, Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate. in P Struk & T Pustelny (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 10830, 108300S, SPIE - International Society for Optical Engineering, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, IOS 2018, Szczyrk, Poland, 26/02/18. https://doi.org/10.1117/12.2503624

Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate. / Wróbel, Jarosław; Grodecki, Kacper; Benyahia, Djalal et al.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / Przemyslaw Struk; Tadeusz Pustelny. Vol. 10830 SPIE - International Society for Optical Engineering, 2018. 108300S.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate

AU - Wróbel, Jarosław

AU - Grodecki, Kacper

AU - Benyahia, Djalal

AU - Murawski, Krzysztof

AU - Michalczewski, Krystian

AU - Grzonka, Justyna

AU - Boguski, Jacek

AU - Gorczyca, Kinga

AU - Umana-Membreno, Gilberto A.

AU - Kubiszyn, Lukasz

AU - Kebłowski, Artur

AU - Michałowski, Paweł Piotr

AU - Gomółka, Emilia

AU - Martyniuk, Piotr

AU - Piotrowski, Józef

AU - Rogalski, Antoni

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The highly Be-doped InAs layer has been grown on semi-insulating GaAs (100) substrate by Molecular Beam Epitaxy. Very good quality of the layer has been attested by high resolution scanning electron microscope (HR-SEM), X-ray diffraction (XRD) and the Raman spectra. The parallel and perpendicular residual strain are determined to be - 1.17 × 10-3, and 1.12 × 10-3, respectively. Moreover, the absorbance (ABS) and photoluminescence (PL) spectra were collected in order to estimate the bandgap narrowing. The 10 meV bandgap shrinking for 1.7×1018 cm-3 acceptor concentration suggests necessity of reexamining the Jain et al model [Jain, S. C., et al. - JAP 68(7): 3747-3749] in the context of actual values of InAs valence-bands effective-masses.

AB - The highly Be-doped InAs layer has been grown on semi-insulating GaAs (100) substrate by Molecular Beam Epitaxy. Very good quality of the layer has been attested by high resolution scanning electron microscope (HR-SEM), X-ray diffraction (XRD) and the Raman spectra. The parallel and perpendicular residual strain are determined to be - 1.17 × 10-3, and 1.12 × 10-3, respectively. Moreover, the absorbance (ABS) and photoluminescence (PL) spectra were collected in order to estimate the bandgap narrowing. The 10 meV bandgap shrinking for 1.7×1018 cm-3 acceptor concentration suggests necessity of reexamining the Jain et al model [Jain, S. C., et al. - JAP 68(7): 3747-3749] in the context of actual values of InAs valence-bands effective-masses.

KW - bandgap narrowing

KW - Be doping

KW - InAs

KW - MBE

KW - photoluminescence

KW - Raman spectroscopy

KW - strain

KW - stress

KW - XRD

UR - https://www.scopus.com/pages/publications/85052613808

UR - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10830.toc#13thConferenceonIntegratedOptics:Sensors,SensingStructuresandMethods

U2 - 10.1117/12.2503624

DO - 10.1117/12.2503624

M3 - Conference paper

AN - SCOPUS:85052613808

SN - 9781510622722

VL - 10830

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Struk, Przemyslaw

A2 - Pustelny, Tadeusz

PB - SPIE - International Society for Optical Engineering

T2 - 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, IOS 2018

Y2 - 26 February 2018 through 2 March 2018

ER -

Wróbel J, Grodecki K, Benyahia D, Murawski K, Michalczewski K, Grzonka J et al. Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate. In Struk P, Pustelny T, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 10830. SPIE - International Society for Optical Engineering. 2018. 108300S doi: 10.1117/12.2503624

Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate

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