Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate

Jarosław Wróbel, Kacper Grodecki, Djalal Benyahia, Krzysztof Murawski, Krystian Michalczewski, Justyna Grzonka, Jacek Boguski, Kinga Gorczyca, Gilberto A. Umana-Membreno, Lukasz Kubiszyn, Artur Kebłowski, Paweł Piotr Michałowski, Emilia Gomółka, Piotr Martyniuk, Józef Piotrowski, Antoni Rogalski

Research output: Chapter in Book/Conference paperConference paperpeer-review

4 Citations (Scopus)

Abstract

The highly Be-doped InAs layer has been grown on semi-insulating GaAs (100) substrate by Molecular Beam Epitaxy. Very good quality of the layer has been attested by high resolution scanning electron microscope (HR-SEM), X-ray diffraction (XRD) and the Raman spectra. The parallel and perpendicular residual strain are determined to be - 1.17 × 10-3, and 1.12 × 10-3, respectively. Moreover, the absorbance (ABS) and photoluminescence (PL) spectra were collected in order to estimate the bandgap narrowing. The 10 meV bandgap shrinking for 1.7×1018 cm-3 acceptor concentration suggests necessity of reexamining the Jain et al model [Jain, S. C., et al. - JAP 68(7): 3747-3749] in the context of actual values of InAs valence-bands effective-masses.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsPrzemyslaw Struk, Tadeusz Pustelny
PublisherSPIE - International Society for Optical Engineering
Volume10830
ISBN (Print)9781510622722
DOIs
Publication statusPublished - 1 Jan 2018
Event13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, IOS 2018 - Szczyrk, Poland
Duration: 26 Feb 20182 Mar 2018

Conference

Conference13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, IOS 2018
Country/TerritoryPoland
CitySzczyrk
Period26/02/182/03/18

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