Abstract
The highly Be-doped InAs layer has been grown on semi-insulating GaAs (100) substrate by Molecular Beam Epitaxy. Very good quality of the layer has been attested by high resolution scanning electron microscope (HR-SEM), X-ray diffraction (XRD) and the Raman spectra. The parallel and perpendicular residual strain are determined to be - 1.17 × 10-3, and 1.12 × 10-3, respectively. Moreover, the absorbance (ABS) and photoluminescence (PL) spectra were collected in order to estimate the bandgap narrowing. The 10 meV bandgap shrinking for 1.7×1018 cm-3 acceptor concentration suggests necessity of reexamining the Jain et al model [Jain, S. C., et al. - JAP 68(7): 3747-3749] in the context of actual values of InAs valence-bands effective-masses.
Original language | English |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | Przemyslaw Struk, Tadeusz Pustelny |
Publisher | SPIE - International Society for Optical Engineering |
Volume | 10830 |
ISBN (Print) | 9781510622722 |
DOIs | |
Publication status | Published - 1 Jan 2018 |
Event | 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, IOS 2018 - Szczyrk, Poland Duration: 26 Feb 2018 → 2 Mar 2018 |
Conference
Conference | 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, IOS 2018 |
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Country/Territory | Poland |
City | Szczyrk |
Period | 26/02/18 → 2/03/18 |