Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling

Mariusz Martyniuk; Jarek Antoszewski; Charles Musca; John Dell; Lorenzo Faraone

Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling

Mariusz Martyniuk, Jarek Antoszewski, Charles Musca, John Dell, Lorenzo Faraone

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
Editors	Aleksandar D. Raki&#263, Yew Tong Yeow
Place of Publication	United States
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	381-384
Volume	Not applicable
Edition	Brisbane, Australia
ISBN (Print)	0780388208
Publication status	Published - 2005
Event	Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling - Brisbane, Australia Duration: 1 Jan 2005 → …

Conference

Conference	Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling
Period	1/01/05 → …

Cite this

Martyniuk, M., Antoszewski, J., Musca, C., Dell, J., & Faraone, L. (2005). Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling. In A. D. Raki&#263, & Y. T. Yeow (Eds.), 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings (Brisbane, Australia ed., Vol. Not applicable, pp. 381-384). IEEE, Institute of Electrical and Electronics Engineers.

Martyniuk, Mariusz ; Antoszewski, Jarek ; Musca, Charles et al. / Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling. 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings. editor / Aleksandar D. Raki&#263 ; Yew Tong Yeow. Vol. Not applicable Brisbane, Australia. ed. United States : IEEE, Institute of Electrical and Electronics Engineers, 2005. pp. 381-384

@inproceedings{71e8708973b34a9a938f32944962098c,

title = "Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling",

author = "Mariusz Martyniuk and Jarek Antoszewski and Charles Musca and John Dell and Lorenzo Faraone",

year = "2005",

language = "English",

isbn = "0780388208",

volume = "Not applicable",

pages = "381--384",

editor = "Raki&#263, {Aleksandar D.} and Yeow, {Yew Tong}",

booktitle = "2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

edition = "Brisbane, Australia",

note = "Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling ; Conference date: 01-01-2005",

}

Martyniuk, M , Antoszewski, J, Musca, C, Dell, J & Faraone, L 2005, Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling. in AD Raki&#263 & YT Yeow (eds), 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings. Brisbane, Australia edn, vol. Not applicable, IEEE, Institute of Electrical and Electronics Engineers, United States, pp. 381-384, Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling, 1/01/05.

Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling. / Martyniuk, Mariusz ; Antoszewski, Jarek; Musca, Charles et al.
2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings. ed. / Aleksandar D. Rakić Yew Tong Yeow. Vol. Not applicable Brisbane, Australia. ed. United States: IEEE, Institute of Electrical and Electronics Engineers, 2005. p. 381-384.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling

AU - Martyniuk, Mariusz

AU - Antoszewski, Jarek

AU - Musca, Charles

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2005

Y1 - 2005

M3 - Conference paper

SN - 0780388208

VL - Not applicable

SP - 381

EP - 384

BT - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

A2 - Raki&#263, Aleksandar D.

A2 - Yeow, Yew Tong

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - United States

T2 - Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling

Y2 - 1 January 2005

ER -

Martyniuk M , Antoszewski J, Musca C, Dell J , Faraone L. Stress response of low temperature PECVD silicon nitride thin films to cryogenic thermal cycling. In Raki&#263 AD, Yeow YT, editors, 2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings. Brisbane, Australia ed. Vol. Not applicable. United States: IEEE, Institute of Electrical and Electronics Engineers. 2005. p. 381-384