Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe

Richard Sewell; John Dell; Charles Musca; Lorenzo Faraone

Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe

Richard Sewell, John Dell, Charles Musca, Lorenzo Faraone

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000)
Editors	Leonard D. Broekman, Brian F. Usher, John D. Riley
Place of Publication	USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	97-100
Volume	1
Edition	La Trobe University, Melbourne
ISBN (Print)	0780366980
Publication status	Published - 2002
Event	Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe - La Trobe University, Melbourne Duration: 1 Jan 2002 → …

Conference

Conference	Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe
Period	1/01/02 → …

Cite this

Sewell, R., Dell, J., Musca, C., & Faraone, L. (2002). Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe. In L. D. Broekman, B. F. Usher, & J. D. Riley (Eds.), Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000) (La Trobe University, Melbourne ed., Vol. 1, pp. 97-100). IEEE, Institute of Electrical and Electronics Engineers.

Sewell, Richard ; Dell, John ; Musca, Charles et al. / Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe. Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000). editor / Leonard D. Broekman ; Brian F. Usher ; John D. Riley. Vol. 1 La Trobe University, Melbourne. ed. USA : IEEE, Institute of Electrical and Electronics Engineers, 2002. pp. 97-100

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title = "Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe",

author = "Richard Sewell and John Dell and Charles Musca and Lorenzo Faraone",

year = "2002",

language = "English",

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volume = "1",

pages = "97--100",

editor = "Broekman, \{Leonard D.\} and Usher, \{Brian F.\} and Riley, \{John D.\}",

booktitle = "Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000)",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

edition = "La Trobe University, Melbourne",

note = "Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe ; Conference date: 01-01-2002",

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Sewell, R, Dell, J, Musca, C & Faraone, L 2002, Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe. in LD Broekman, BF Usher & JD Riley (eds), Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000). La Trobe University, Melbourne edn, vol. 1, IEEE, Institute of Electrical and Electronics Engineers, USA, pp. 97-100, Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe, 1/01/02.

Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe. / Sewell, Richard; Dell, John; Musca, Charles et al.
Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000). ed. / Leonard D. Broekman; Brian F. Usher; John D. Riley. Vol. 1 La Trobe University, Melbourne. ed. USA: IEEE, Institute of Electrical and Electronics Engineers, 2002. p. 97-100.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe

AU - Sewell, Richard

AU - Dell, John

AU - Musca, Charles

AU - Faraone, Lorenzo

PY - 2002

Y1 - 2002

M3 - Conference paper

SN - 0780366980

VL - 1

SP - 97

EP - 100

BT - Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000)

A2 - Broekman, Leonard D.

A2 - Usher, Brian F.

A2 - Riley, John D.

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - USA

T2 - Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe

Y2 - 1 January 2002

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Sewell R, Dell J, Musca C, Faraone L. Stress relaxation mechanism in mismatched epitaxial growth of HgCdTe. In Broekman LD, Usher BF, Riley JD, editors, Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000). La Trobe University, Melbourne ed. Vol. 1. USA: IEEE, Institute of Electrical and Electronics Engineers. 2002. p. 97-100