Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Two experimental techniques have been investigated to examine residual stress in low-temperature plasma enhanced chemical vapour deposited (PECVD) SiNx thin films: one that measures the stress-induced Substrate Curvature, and the other that takes advantage of the stress-induced deformation of freestanding, diagnostic microstructures. A general linear dependence of residual stress on SiNx deposition temperature is observed, with the magnitude of stress changing linearly from similar to 300 MPa tensile stress to similar to 600 MPa compressive stress as the deposition temperature is decreased from 300 to 100 degrees C. However, the results deviate from the linear dependence by a different degree for both measurement techniques at low deposition temperatures. The stress values obtained via the Substrate Curvature method deviate from the linear dependence for deposition temperatures below 200 degrees C, whereas the values obtained via the diagnostic microstructures method deviate from the linear dependence for deposition temperatures below 100 degrees C. Stress uniformity over the deposition area is also investigated.
Original languageEnglish
Pages (from-to)S29-S38
JournalSmart Materials and Structures
Volume15
Issue number1
DOIs
Publication statusPublished - 2006

Fingerprint

cold plasmas
Silicon nitride
silicon nitrides
Vapors
vapors
Plasmas
Thin films
thin films
Temperature
residual stress
Residual stresses
temperature
curvature
microstructure
Microstructure
Substrates
tensile stress
Compressive stress
Tensile stress
silicon nitride

Cite this

@article{922d99a3daf142669a5e8352411d2243,
title = "Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films",
abstract = "Two experimental techniques have been investigated to examine residual stress in low-temperature plasma enhanced chemical vapour deposited (PECVD) SiNx thin films: one that measures the stress-induced Substrate Curvature, and the other that takes advantage of the stress-induced deformation of freestanding, diagnostic microstructures. A general linear dependence of residual stress on SiNx deposition temperature is observed, with the magnitude of stress changing linearly from similar to 300 MPa tensile stress to similar to 600 MPa compressive stress as the deposition temperature is decreased from 300 to 100 degrees C. However, the results deviate from the linear dependence by a different degree for both measurement techniques at low deposition temperatures. The stress values obtained via the Substrate Curvature method deviate from the linear dependence for deposition temperatures below 200 degrees C, whereas the values obtained via the diagnostic microstructures method deviate from the linear dependence for deposition temperatures below 100 degrees C. Stress uniformity over the deposition area is also investigated.",
author = "Mariusz Martyniuk and Jarek Antoszewski and Charles Musca and John Dell and Lorenzo Faraone",
year = "2006",
doi = "10.1088/0964-1726/15/1/006",
language = "English",
volume = "15",
pages = "S29--S38",
journal = "SMART MATERIALS & STRUCTURES",
issn = "0964-1726",
publisher = "IOP Publishing",
number = "1",

}

TY - JOUR

T1 - Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films

AU - Martyniuk, Mariusz

AU - Antoszewski, Jarek

AU - Musca, Charles

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2006

Y1 - 2006

N2 - Two experimental techniques have been investigated to examine residual stress in low-temperature plasma enhanced chemical vapour deposited (PECVD) SiNx thin films: one that measures the stress-induced Substrate Curvature, and the other that takes advantage of the stress-induced deformation of freestanding, diagnostic microstructures. A general linear dependence of residual stress on SiNx deposition temperature is observed, with the magnitude of stress changing linearly from similar to 300 MPa tensile stress to similar to 600 MPa compressive stress as the deposition temperature is decreased from 300 to 100 degrees C. However, the results deviate from the linear dependence by a different degree for both measurement techniques at low deposition temperatures. The stress values obtained via the Substrate Curvature method deviate from the linear dependence for deposition temperatures below 200 degrees C, whereas the values obtained via the diagnostic microstructures method deviate from the linear dependence for deposition temperatures below 100 degrees C. Stress uniformity over the deposition area is also investigated.

AB - Two experimental techniques have been investigated to examine residual stress in low-temperature plasma enhanced chemical vapour deposited (PECVD) SiNx thin films: one that measures the stress-induced Substrate Curvature, and the other that takes advantage of the stress-induced deformation of freestanding, diagnostic microstructures. A general linear dependence of residual stress on SiNx deposition temperature is observed, with the magnitude of stress changing linearly from similar to 300 MPa tensile stress to similar to 600 MPa compressive stress as the deposition temperature is decreased from 300 to 100 degrees C. However, the results deviate from the linear dependence by a different degree for both measurement techniques at low deposition temperatures. The stress values obtained via the Substrate Curvature method deviate from the linear dependence for deposition temperatures below 200 degrees C, whereas the values obtained via the diagnostic microstructures method deviate from the linear dependence for deposition temperatures below 100 degrees C. Stress uniformity over the deposition area is also investigated.

U2 - 10.1088/0964-1726/15/1/006

DO - 10.1088/0964-1726/15/1/006

M3 - Article

VL - 15

SP - S29-S38

JO - SMART MATERIALS & STRUCTURES

JF - SMART MATERIALS & STRUCTURES

SN - 0964-1726

IS - 1

ER -