Stress control of porous silicon films for microelectromechanical systems

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    Abstract

    © 2015 Elsevier Inc. All rights reserved. Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated with both X-ray diffraction and radius of curvature measurements. Annealed films could achieve compressive or tensile stress. The effect of annealing was reversed by a short HF dip, except in the case of nitridised samples (annealed in N2 at temperatures above 500 °C). The effect of hydrogen desorption, oxidation and nitridation, modified via annealing temperature and ambient, was studied to understand the evolution of physical properties and the mechanism of the stress modification. The effect of stress on PS microbeams was studied to determine the influence when PS films are used as the structural layer in a micromachined device. When modelling the effect of stress changes on the order of those observed during thermal annealing, the results indicated that for PS-based microbeams, stress is a significant factor in determining resonant frequency, far more than found in nonporous materials, illustrating the need for accurate control of stress.
    Original languageEnglish
    Pages (from-to)88-94
    Number of pages7
    JournalMicroporous and Mesoporous Materials
    Volume218
    Early online date17 Jul 2015
    DOIs
    Publication statusPublished - 1 Dec 2015

    Fingerprint

    Porous silicon
    silicon films
    porous silicon
    microelectromechanical systems
    MEMS
    Annealing
    annealing
    microbeams
    X ray diffraction
    Nitridation
    Compressive stress
    Tensile stress
    tensile stress
    diffraction
    Hydrogen
    Natural frequencies
    Desorption
    Physical properties
    Porosity
    resonant frequencies

    Cite this

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    title = "Stress control of porous silicon films for microelectromechanical systems",
    abstract = "{\circledC} 2015 Elsevier Inc. All rights reserved. Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated with both X-ray diffraction and radius of curvature measurements. Annealed films could achieve compressive or tensile stress. The effect of annealing was reversed by a short HF dip, except in the case of nitridised samples (annealed in N2 at temperatures above 500 °C). The effect of hydrogen desorption, oxidation and nitridation, modified via annealing temperature and ambient, was studied to understand the evolution of physical properties and the mechanism of the stress modification. The effect of stress on PS microbeams was studied to determine the influence when PS films are used as the structural layer in a micromachined device. When modelling the effect of stress changes on the order of those observed during thermal annealing, the results indicated that for PS-based microbeams, stress is a significant factor in determining resonant frequency, far more than found in nonporous materials, illustrating the need for accurate control of stress.",
    author = "Xiao Sun and Adrian Keating and Giacinta Parish",
    year = "2015",
    month = "12",
    day = "1",
    doi = "10.1016/j.micromeso.2015.07.010",
    language = "English",
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    pages = "88--94",
    journal = "Microporous and Mesoporous Materials",
    issn = "1387-1811",
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    TY - JOUR

    T1 - Stress control of porous silicon films for microelectromechanical systems

    AU - Sun, Xiao

    AU - Keating, Adrian

    AU - Parish, Giacinta

    PY - 2015/12/1

    Y1 - 2015/12/1

    N2 - © 2015 Elsevier Inc. All rights reserved. Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated with both X-ray diffraction and radius of curvature measurements. Annealed films could achieve compressive or tensile stress. The effect of annealing was reversed by a short HF dip, except in the case of nitridised samples (annealed in N2 at temperatures above 500 °C). The effect of hydrogen desorption, oxidation and nitridation, modified via annealing temperature and ambient, was studied to understand the evolution of physical properties and the mechanism of the stress modification. The effect of stress on PS microbeams was studied to determine the influence when PS films are used as the structural layer in a micromachined device. When modelling the effect of stress changes on the order of those observed during thermal annealing, the results indicated that for PS-based microbeams, stress is a significant factor in determining resonant frequency, far more than found in nonporous materials, illustrating the need for accurate control of stress.

    AB - © 2015 Elsevier Inc. All rights reserved. Control of stress in porous silicon (PS) through porosity changes was studied using X-ray diffraction rocking curve measurements. The effect of thermal annealing on the stress was also investigated with both X-ray diffraction and radius of curvature measurements. Annealed films could achieve compressive or tensile stress. The effect of annealing was reversed by a short HF dip, except in the case of nitridised samples (annealed in N2 at temperatures above 500 °C). The effect of hydrogen desorption, oxidation and nitridation, modified via annealing temperature and ambient, was studied to understand the evolution of physical properties and the mechanism of the stress modification. The effect of stress on PS microbeams was studied to determine the influence when PS films are used as the structural layer in a micromachined device. When modelling the effect of stress changes on the order of those observed during thermal annealing, the results indicated that for PS-based microbeams, stress is a significant factor in determining resonant frequency, far more than found in nonporous materials, illustrating the need for accurate control of stress.

    U2 - 10.1016/j.micromeso.2015.07.010

    DO - 10.1016/j.micromeso.2015.07.010

    M3 - Article

    VL - 218

    SP - 88

    EP - 94

    JO - Microporous and Mesoporous Materials

    JF - Microporous and Mesoporous Materials

    SN - 1387-1811

    ER -