Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: effect of deposition thickness and composition

Wen Lei, H. H. Tan, C. Jagadish, Q.J. Ren, J. Lu, Z.H. Chen

Research output: Contribution to journal › Article › peer-review

Cite this

@article{33d1a6096325474186d1928a15e00dac,

title = "Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: effect of deposition thickness and composition",

author = "Wen Lei and Tan, {H. H.} and C. Jagadish and Q.J. Ren and J. Lu and Z.H. Chen",

year = "2010",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: effect of deposition thickness and composition

AU - Lei, Wen

AU - Tan, H. H.

AU - Jagadish, C.

AU - Ren, Q.J.

AU - Lu, J.

AU - Chen, Z.H.

PY - 2010

Y1 - 2010

M3 - Article

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 223108

ER -