Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots

Cailei Yuan; Yaxing Mei; Aijun Hong; Ting Yu; Yong Yang; Fanyan Zeng; Keng Xu; Qinliang Li; Xingfang Luo; Jun He; Wen Lei

doi:10.1021/acs.jpcc.6b12343

Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots

Cailei Yuan, Yaxing Mei, Aijun Hong, Ting Yu, Yong Yang, Fanyan Zeng, Keng Xu, Qinliang Li, Xingfang Luo, Jun He, Wen Lei

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Understanding the physics that correlate strain and physical properties of quantum dots (QDs) is crucial for technology applications. In this paper, GaAs QDs confined in Al2O3 matrix are synthesized using the pulsed laser deposition method and rapid thermal annealing technique. It is revealed that the confined GaAs QDs experience compressive strain during the growth process. The strain can be used to improve and tailor the optical properties of confined GaAs QDs by engineering the bandgap and thus the photoluminescence emission band to a distinct wavelength. These findings presented here can engineer the properties of GaAs QDs for potential application in optoelectronic and photonic devices.

Original language	English
Pages (from-to)	5800-5804
Number of pages	5
Journal	The Journal Of Physical Chemistry C
Volume	121
Issue number	10
DOIs	https://doi.org/10.1021/acs.jpcc.6b12343
Publication status	Published - 16 Mar 2017

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10.1021/acs.jpcc.6b12343

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abstract = "Understanding the physics that correlate strain and physical properties of quantum dots (QDs) is crucial for technology applications. In this paper, GaAs QDs confined in Al2O3 matrix are synthesized using the pulsed laser deposition method and rapid thermal annealing technique. It is revealed that the confined GaAs QDs experience compressive strain during the growth process. The strain can be used to improve and tailor the optical properties of confined GaAs QDs by engineering the bandgap and thus the photoluminescence emission band to a distinct wavelength. These findings presented here can engineer the properties of GaAs QDs for potential application in optoelectronic and photonic devices.",

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T1 - Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots

AU - Yuan, Cailei

AU - Mei, Yaxing

AU - Hong, Aijun

AU - Yu, Ting

AU - Yang, Yong

AU - Zeng, Fanyan

AU - Xu, Keng

AU - Li, Qinliang

AU - Luo, Xingfang

AU - He, Jun

AU - Lei, Wen

PY - 2017/3/16

Y1 - 2017/3/16

N2 - Understanding the physics that correlate strain and physical properties of quantum dots (QDs) is crucial for technology applications. In this paper, GaAs QDs confined in Al2O3 matrix are synthesized using the pulsed laser deposition method and rapid thermal annealing technique. It is revealed that the confined GaAs QDs experience compressive strain during the growth process. The strain can be used to improve and tailor the optical properties of confined GaAs QDs by engineering the bandgap and thus the photoluminescence emission band to a distinct wavelength. These findings presented here can engineer the properties of GaAs QDs for potential application in optoelectronic and photonic devices.

AB - Understanding the physics that correlate strain and physical properties of quantum dots (QDs) is crucial for technology applications. In this paper, GaAs QDs confined in Al2O3 matrix are synthesized using the pulsed laser deposition method and rapid thermal annealing technique. It is revealed that the confined GaAs QDs experience compressive strain during the growth process. The strain can be used to improve and tailor the optical properties of confined GaAs QDs by engineering the bandgap and thus the photoluminescence emission band to a distinct wavelength. These findings presented here can engineer the properties of GaAs QDs for potential application in optoelectronic and photonic devices.

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KW - NANOCRYSTALS

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Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots

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Bandgap engineered HgCdTe heterostructures on GaSb alternative substrates

National Facility for Characterisation of Infrared Imaging Technologies

HgCdSe: A novel II-VI semiconductor material for next generation infrared technologies

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Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots

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Bandgap engineered HgCdTe heterostructures on GaSb alternative substrates

National Facility for Characterisation of Infrared Imaging Technologies

HgCdSe: A novel II-VI semiconductor material for next generation infrared technologies

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