Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots

Cailei Yuan, Yaxing Mei, Aijun Hong, Ting Yu, Yong Yang, Fanyan Zeng, Keng Xu, Qinliang Li, Xingfang Luo, Jun He, Wen Lei

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    Understanding the physics that correlate strain and physical properties of quantum dots (QDs) is crucial for technology applications. In this paper, GaAs QDs confined in Al2O3 matrix are synthesized using the pulsed laser deposition method and rapid thermal annealing technique. It is revealed that the confined GaAs QDs experience compressive strain during the growth process. The strain can be used to improve and tailor the optical properties of confined GaAs QDs by engineering the bandgap and thus the photoluminescence emission band to a distinct wavelength. These findings presented here can engineer the properties of GaAs QDs for potential application in optoelectronic and photonic devices.

    Original languageEnglish
    Pages (from-to)5800-5804
    Number of pages5
    JournalThe Journal Of Physical Chemistry C
    Volume121
    Issue number10
    DOIs
    Publication statusPublished - 16 Mar 2017

    Cite this

    Yuan, Cailei ; Mei, Yaxing ; Hong, Aijun ; Yu, Ting ; Yang, Yong ; Zeng, Fanyan ; Xu, Keng ; Li, Qinliang ; Luo, Xingfang ; He, Jun ; Lei, Wen. / Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots. In: The Journal Of Physical Chemistry C. 2017 ; Vol. 121, No. 10. pp. 5800-5804.
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    abstract = "Understanding the physics that correlate strain and physical properties of quantum dots (QDs) is crucial for technology applications. In this paper, GaAs QDs confined in Al2O3 matrix are synthesized using the pulsed laser deposition method and rapid thermal annealing technique. It is revealed that the confined GaAs QDs experience compressive strain during the growth process. The strain can be used to improve and tailor the optical properties of confined GaAs QDs by engineering the bandgap and thus the photoluminescence emission band to a distinct wavelength. These findings presented here can engineer the properties of GaAs QDs for potential application in optoelectronic and photonic devices.",
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    Yuan, C, Mei, Y, Hong, A, Yu, T, Yang, Y, Zeng, F, Xu, K, Li, Q, Luo, X, He, J & Lei, W 2017, 'Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots' The Journal Of Physical Chemistry C, vol. 121, no. 10, pp. 5800-5804. https://doi.org/10.1021/acs.jpcc.6b12343

    Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots. / Yuan, Cailei; Mei, Yaxing; Hong, Aijun; Yu, Ting; Yang, Yong; Zeng, Fanyan; Xu, Keng; Li, Qinliang; Luo, Xingfang; He, Jun; Lei, Wen.

    In: The Journal Of Physical Chemistry C, Vol. 121, No. 10, 16.03.2017, p. 5800-5804.

    Research output: Contribution to journalArticle

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    AU - Yuan, Cailei

    AU - Mei, Yaxing

    AU - Hong, Aijun

    AU - Yu, Ting

    AU - Yang, Yong

    AU - Zeng, Fanyan

    AU - Xu, Keng

    AU - Li, Qinliang

    AU - Luo, Xingfang

    AU - He, Jun

    AU - Lei, Wen

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