Projects per year
Understanding the physics that correlate strain and physical properties of quantum dots (QDs) is crucial for technology applications. In this paper, GaAs QDs confined in Al2O3 matrix are synthesized using the pulsed laser deposition method and rapid thermal annealing technique. It is revealed that the confined GaAs QDs experience compressive strain during the growth process. The strain can be used to improve and tailor the optical properties of confined GaAs QDs by engineering the bandgap and thus the photoluminescence emission band to a distinct wavelength. These findings presented here can engineer the properties of GaAs QDs for potential application in optoelectronic and photonic devices.
FingerprintDive into the research topics of 'Strain Engineered Band Structure and Optical Properties of Confined GaAs Quantum Dots'. Together they form a unique fingerprint.
- 3 Finished
1/01/17 → 31/12/19
1/01/13 → 28/09/18