Strain and doping effects on the energetics of hydrogen desorption from the MgH2 (001) surface

T. Hussain; A. D. Sarkar; T. A. Maark; W. Sun; R. Ahuja

doi:10.1209/0295-5075/101/27006

Strain and doping effects on the energetics of hydrogen desorption from the MgH2 (001) surface

T. Hussain, A. D. Sarkar, T. A. Maark, W. Sun, R. Ahuja

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Abstract

On the basis of first-principles calculations we have systematically investigated the energetics of hydrogen desorption from the MgH2 (001) surface. Based on total energy and electronic structure calculations, two modes namely strain and doping of selected dopants (Al, Si, Ti) and the combined effect of both on the dehydrogenation energies (ΔH) of MgH2 (001) systems have been analyzed. The maximum improvement in ΔH has been obtained with the combined effect of doping and strain. Among all the dopants, Al gives the lowest value of ΔH when the system Al-MgH2 is subjected to a 7.5% biaxial symmetric strain whereas the Si-MgH2 systems show the least improvement in ΔH. The doping of Ti on MgH 2 (001) is also very beneficial even without strain. The reduction in ΔH is caused by the charge localization on the metal atoms, destabilization and the weakening of metal-hydrogen bonds. Copyright © EPLA, 2013.

Original language	English
Article number	27006
Journal	EPL
Volume	101
Issue number	2
DOIs	https://doi.org/10.1209/0295-5075/101/27006
Publication status	Published - 31 Jan 2013
Externally published	Yes

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title = "Strain and doping effects on the energetics of hydrogen desorption from the MgH2 (001) surface",

abstract = "On the basis of first-principles calculations we have systematically investigated the energetics of hydrogen desorption from the MgH2 (001) surface. Based on total energy and electronic structure calculations, two modes namely strain and doping of selected dopants (Al, Si, Ti) and the combined effect of both on the dehydrogenation energies (ΔH) of MgH2 (001) systems have been analyzed. The maximum improvement in ΔH has been obtained with the combined effect of doping and strain. Among all the dopants, Al gives the lowest value of ΔH when the system Al-MgH2 is subjected to a 7.5% biaxial symmetric strain whereas the Si-MgH2 systems show the least improvement in ΔH. The doping of Ti on MgH 2 (001) is also very beneficial even without strain. The reduction in ΔH is caused by the charge localization on the metal atoms, destabilization and the weakening of metal-hydrogen bonds. Copyright {\textcopyright} EPLA, 2013.",

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T1 - Strain and doping effects on the energetics of hydrogen desorption from the MgH2 (001) surface

AU - Hussain, T.

AU - Sarkar, A. D.

AU - Maark, T. A.

AU - Sun, W.

AU - Ahuja, R.

PY - 2013/1/31

Y1 - 2013/1/31

N2 - On the basis of first-principles calculations we have systematically investigated the energetics of hydrogen desorption from the MgH2 (001) surface. Based on total energy and electronic structure calculations, two modes namely strain and doping of selected dopants (Al, Si, Ti) and the combined effect of both on the dehydrogenation energies (ΔH) of MgH2 (001) systems have been analyzed. The maximum improvement in ΔH has been obtained with the combined effect of doping and strain. Among all the dopants, Al gives the lowest value of ΔH when the system Al-MgH2 is subjected to a 7.5% biaxial symmetric strain whereas the Si-MgH2 systems show the least improvement in ΔH. The doping of Ti on MgH 2 (001) is also very beneficial even without strain. The reduction in ΔH is caused by the charge localization on the metal atoms, destabilization and the weakening of metal-hydrogen bonds. Copyright © EPLA, 2013.

AB - On the basis of first-principles calculations we have systematically investigated the energetics of hydrogen desorption from the MgH2 (001) surface. Based on total energy and electronic structure calculations, two modes namely strain and doping of selected dopants (Al, Si, Ti) and the combined effect of both on the dehydrogenation energies (ΔH) of MgH2 (001) systems have been analyzed. The maximum improvement in ΔH has been obtained with the combined effect of doping and strain. Among all the dopants, Al gives the lowest value of ΔH when the system Al-MgH2 is subjected to a 7.5% biaxial symmetric strain whereas the Si-MgH2 systems show the least improvement in ΔH. The doping of Ti on MgH 2 (001) is also very beneficial even without strain. The reduction in ΔH is caused by the charge localization on the metal atoms, destabilization and the weakening of metal-hydrogen bonds. Copyright © EPLA, 2013.

U2 - 10.1209/0295-5075/101/27006

DO - 10.1209/0295-5075/101/27006

M3 - Article

SN - 0295-5075

VL - 101

JO - EPL

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IS - 2

M1 - 27006

ER -

Strain and doping effects on the energetics of hydrogen desorption from the MgH2 (001) surface

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