Storage logic primitives based on stacked memristor-CMOS technology

Sung Wan Cho, Jason K. Eshraghian, Ju Song Eom, Sungjin Kim, Kyoungrok Cho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A newer and higher standard of circuits is emerging with the advent of memristive logic components. In the present paper memristor-CMOS (MCM)-based storage primitives are presented by exploiting the resistive switching property of the memristor. Practical implementation and fabrication of MCM-based logic circuits were verified by way of SPICE modeling, related simulations, and device characterization. The logic structure was designed by combining memristors with CMOS, and fabrication was performed by atomic layer deposition and an aluminum evaporation process in the form of a memristor on 350-nm CMOS technology. The proposed design method realized more efficient area utilization compared with current CMOS technology. As a result, the presented memristor-CMOS-based SR flip-flop and JK master slave flip-flop decreased the area by a factor of 31.2-52.2% with respect to the equivalent state memory CMOS circuits. The proposed memristor-CMOS technology allows for significant reduction of the silicon area, sustainability of Moore's law, and can be applied to increase the density of microchips.

Original languageEnglish
Pages (from-to)12726-12731
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number12
DOIs
Publication statusPublished - 1 Dec 2016

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