SOI Gated Resistor: CMOS without Junctions

J. P. Colinge; C. W. Lee; A. Afzalian; N. Dehdashti; R. Yan; I. Ferain; P. Razavi; B. O'Neill; A. Blake; M. White; A. M. Kelleher; B. McCarthy; R. Murphy

SOI Gated Resistor: CMOS without Junctions

J. P. Colinge, C. W. Lee, A. Afzalian, N. Dehdashti, R. Yan, I. Ferain, P. Razavi, B. O'Neill, A. Blake, M. White, A. M. Kelleher, B. McCarthy, R. Murphy

School of Engineering

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

88 Citations (Web of Science)

Abstract

We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.

Original language	English
Title of host publication	2009 IEEE INTERNATIONAL SOI CONFERENCE
Publisher	Wiley-IEEE Press
Pages	137-138
Number of pages	2
ISBN (Print)	978-1-4244-4256-0
Publication status	Published - 2009
Event	IEEE International SOI Conference 2009 - Foster City, Canada Duration: 5 Oct 2009 → 8 Oct 2009

Conference

Conference	IEEE International SOI Conference 2009
Country/Territory	Canada
City	Foster City
Period	5/10/09 → 8/10/09

Cite this

@inproceedings{f5679d1d09704ca1b4cfb7f42a365bfd,

title = "SOI Gated Resistor: CMOS without Junctions",

abstract = "We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.",

keywords = "MOSFETS",

author = "Colinge, {J. P.} and Lee, {C. W.} and A. Afzalian and N. Dehdashti and R. Yan and I. Ferain and P. Razavi and B. O'Neill and A. Blake and M. White and Kelleher, {A. M.} and B. McCarthy and R. Murphy",

year = "2009",

language = "English",

isbn = "978-1-4244-4256-0",

pages = "137--138",

booktitle = "2009 IEEE INTERNATIONAL SOI CONFERENCE",

publisher = "Wiley-IEEE Press",

note = "IEEE International SOI Conference 2009 ; Conference date: 05-10-2009 Through 08-10-2009",

}

SOI Gated Resistor : CMOS without Junctions. / Colinge, J. P.; Lee, C. W.; Afzalian, A.; Dehdashti, N.; Yan, R.; Ferain, I.; Razavi, P.; O'Neill, B.; Blake, A.; White, M.; Kelleher, A. M.; McCarthy, B.; Murphy, R.

2009 IEEE INTERNATIONAL SOI CONFERENCE. Wiley-IEEE Press, 2009. p. 137-138.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - SOI Gated Resistor

T2 - IEEE International SOI Conference 2009

AU - Colinge, J. P.

AU - Lee, C. W.

AU - Afzalian, A.

AU - Dehdashti, N.

AU - Yan, R.

AU - Ferain, I.

AU - Razavi, P.

AU - O'Neill, B.

AU - Blake, A.

AU - White, M.

AU - Kelleher, A. M.

AU - McCarthy, B.

AU - Murphy, R.

PY - 2009

Y1 - 2009

N2 - We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.

AB - We report the fabrication of junctionless SOI MOSFETs. Such devices greatly simplify processing thermal budget and behave as regular multigate SOI transistors.

KW - MOSFETS

M3 - Conference paper

SN - 978-1-4244-4256-0

SP - 137

EP - 138

BT - 2009 IEEE INTERNATIONAL SOI CONFERENCE

PB - Wiley-IEEE Press

Y2 - 5 October 2009 through 8 October 2009

ER -

SOI Gated Resistor: CMOS without Junctions

Abstract

Conference

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