SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors

    Research output: Contribution to journalArticle

    9 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)122106-1 - 122106-3
    JournalApplied Physics Letters
    Volume100
    Issue number12
    DOIs
    Publication statusPublished - 2012

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