SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors

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@article{f7374bf3e67846288bc4aa34be4cc898,

title = "SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors",

author = "{Asgari Tokaldani}, Asghar and Lorenzo Faraone",

year = "2012",

doi = "10.1063/1.3696641",

language = "English",

volume = "100",

pages = "122106--1 -- 122106--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors

AU - Asgari Tokaldani, Asghar

AU - Faraone, Lorenzo

PY - 2012

Y1 - 2012

U2 - 10.1063/1.3696641

DO - 10.1063/1.3696641

M3 - Article

VL - 100

SP - 122106-1 - 122106-3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

ER -