Original language | English |
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Pages (from-to) | 122106-1 - 122106-3 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2012 |
SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors
Research output: Contribution to journal › Article › peer-review
10
Citations
(Web of Science)