Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs

Nima Dehdashti Akhavan, Aryan Afzalian, Chi-Woo Lee, Ran Yan, Isabelle Ferain, Pedram Razavi, Giorgos Fagas, Jean-Pierre Colinge

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-effect transistors using 3-D numerical simulations. The formation of 1-D subbands in SOI nanowire, which results in the oscillation of the current and transconductance characteristic at low temperatures, has been studied in detail. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased, thereby enabling the experimental evaluation of the subband energy spacing in nanowire structures (subband spectroscopy).

Original languageEnglish
Pages (from-to)1102-1109
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume57
Issue number5
DOIs
Publication statusPublished - May 2010

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