Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs

Nima Dehdashti Akhavan; Aryan Afzalian; Chi-Woo Lee; Ran Yan; Isabelle Ferain; Pedram Razavi; Giorgos Fagas; Jean-Pierre Colinge

doi:10.1109/TED.2010.2044295

Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs

Nima Dehdashti Akhavan, Aryan Afzalian, Chi-Woo Lee, Ran Yan, Isabelle Ferain, Pedram Razavi, Giorgos Fagas, Jean-Pierre Colinge

School of Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-effect transistors using 3-D numerical simulations. The formation of 1-D subbands in SOI nanowire, which results in the oscillation of the current and transconductance characteristic at low temperatures, has been studied in detail. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased, thereby enabling the experimental evaluation of the subband energy spacing in nanowire structures (subband spectroscopy).

Original language	English
Pages (from-to)	1102-1109
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	5
DOIs	https://doi.org/10.1109/TED.2010.2044295
Publication status	Published - May 2010

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title = "Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs",

abstract = "In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-effect transistors using 3-D numerical simulations. The formation of 1-D subbands in SOI nanowire, which results in the oscillation of the current and transconductance characteristic at low temperatures, has been studied in detail. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased, thereby enabling the experimental evaluation of the subband energy spacing in nanowire structures (subband spectroscopy).",

keywords = "Current oscillation, low temperature, multiplegate MOSFET, nanowire, numerical device modeling, 3-D simulation, 1-D quantum transport, SILICON NANOWIRE TRANSISTORS, EFFECTIVE-MASS APPROXIMATION, LOW-TEMPERATURE, BALLISTIC TRANSPORT, NANOTRANSISTORS, WIRE",

author = "Akhavan, {Nima Dehdashti} and Aryan Afzalian and Chi-Woo Lee and Ran Yan and Isabelle Ferain and Pedram Razavi and Giorgos Fagas and Jean-Pierre Colinge",

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doi = "10.1109/TED.2010.2044295",

language = "English",

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T1 - Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs

AU - Akhavan, Nima Dehdashti

AU - Afzalian, Aryan

AU - Lee, Chi-Woo

AU - Yan, Ran

AU - Ferain, Isabelle

AU - Razavi, Pedram

AU - Fagas, Giorgos

AU - Colinge, Jean-Pierre

PY - 2010/5

Y1 - 2010/5

N2 - In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-effect transistors using 3-D numerical simulations. The formation of 1-D subbands in SOI nanowire, which results in the oscillation of the current and transconductance characteristic at low temperatures, has been studied in detail. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased, thereby enabling the experimental evaluation of the subband energy spacing in nanowire structures (subband spectroscopy).

AB - In this paper, we simulate quantum transport in trigate silicon-on-insulator (SOI) nanowire field-effect transistors using 3-D numerical simulations. The formation of 1-D subbands in SOI nanowire, which results in the oscillation of the current and transconductance characteristic at low temperatures, has been studied in detail. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased, thereby enabling the experimental evaluation of the subband energy spacing in nanowire structures (subband spectroscopy).

KW - Current oscillation

KW - low temperature

KW - multiplegate MOSFET

KW - nanowire

KW - numerical device modeling

KW - 3-D simulation

KW - 1-D quantum transport

KW - SILICON NANOWIRE TRANSISTORS

KW - EFFECTIVE-MASS APPROXIMATION

KW - LOW-TEMPERATURE

KW - BALLISTIC TRANSPORT

KW - NANOTRANSISTORS

KW - WIRE

U2 - 10.1109/TED.2010.2044295

DO - 10.1109/TED.2010.2044295

M3 - Article

SN - 0018-9383

VL - 57

SP - 1102

EP - 1109

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Simulation of Quantum Current Oscillations in Trigate SOI MOSFETs

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