Silicon and Silicon dioxide thin films deposited by ICPCVD at low temperature and high rate for MEMS applications

Research output: Chapter in Book/Conference paperConference paper

Abstract

This paper presents Low temperature (50 degrees C) high deposition rate (1.3nm/sec) inductively coupled plasma chemical vapor deposited silicon and silicon oxide films with uniform thicknesses over large area. It is observed deposition rate of Si thin is influenced by the SiH4 flow rate and nitrous oxide flow rate for SiOx thin films. The stress in the silicon layer is nominal hence they can be used as the structural or sacrificial layers. Silicon oxide layers showed moderately high stress and they are well suited as sacrificial layers for MEMS application. All layers are deposited at 50 degrees C hence they are well suited for deposition on flexible polymers which are extensively used in metamaterial, MEMS and microfluidic applications.

Original languageEnglish
Title of host publication2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages24-26
Number of pages3
ISBN (Electronic)9781538695241
DOIs
Publication statusPublished - 14 May 2019
Event2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018 - Perth, Australia
Duration: 9 Dec 201813 Dec 2018

Publication series

Name2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018

Conference

Conference2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018
CountryAustralia
CityPerth
Period9/12/1813/12/18

Fingerprint

Silicon oxides
Silicon
Deposition rates
Silicon Dioxide
microelectromechanical systems
MEMS
Silica
Flow rate
silicon dioxide
Thin films
Metamaterials
Nitrous Oxide
Inductively coupled plasma
silicon
thin films
Microfluidics
Oxide films
Polymers
silicon oxides
Vapors

Cite this

Revuri, P. K., Tripathi, D. K., Martyniuk, M., Silva, K. K. M. B. D., Putrino, G., Keating, A., & Faraone, L. (2019). Silicon and Silicon dioxide thin films deposited by ICPCVD at low temperature and high rate for MEMS applications. In 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018 (pp. 24-26). [8715249] (2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/COMMAD.2018.8715249
Revuri, Praveen K. ; Tripathi, D. K. ; Martyniuk, M. ; Silva, K. K.M.B.D. ; Putrino, G. ; Keating, Adrian ; Faraone, L. / Silicon and Silicon dioxide thin films deposited by ICPCVD at low temperature and high rate for MEMS applications. 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018. IEEE, Institute of Electrical and Electronics Engineers, 2019. pp. 24-26 (2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018).
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abstract = "This paper presents Low temperature (50 degrees C) high deposition rate (1.3nm/sec) inductively coupled plasma chemical vapor deposited silicon and silicon oxide films with uniform thicknesses over large area. It is observed deposition rate of Si thin is influenced by the SiH4 flow rate and nitrous oxide flow rate for SiOx thin films. The stress in the silicon layer is nominal hence they can be used as the structural or sacrificial layers. Silicon oxide layers showed moderately high stress and they are well suited as sacrificial layers for MEMS application. All layers are deposited at 50 degrees C hence they are well suited for deposition on flexible polymers which are extensively used in metamaterial, MEMS and microfluidic applications.",
author = "Revuri, {Praveen K.} and Tripathi, {D. K.} and M. Martyniuk and Silva, {K. K.M.B.D.} and G. Putrino and Adrian Keating and L. Faraone",
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Revuri, PK, Tripathi, DK, Martyniuk, M, Silva, KKMBD, Putrino, G, Keating, A & Faraone, L 2019, Silicon and Silicon dioxide thin films deposited by ICPCVD at low temperature and high rate for MEMS applications. in 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018., 8715249, 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018, IEEE, Institute of Electrical and Electronics Engineers, pp. 24-26, 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018, Perth, Australia, 9/12/18. https://doi.org/10.1109/COMMAD.2018.8715249

Silicon and Silicon dioxide thin films deposited by ICPCVD at low temperature and high rate for MEMS applications. / Revuri, Praveen K.; Tripathi, D. K.; Martyniuk, M.; Silva, K. K.M.B.D.; Putrino, G.; Keating, Adrian; Faraone, L.

2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018. IEEE, Institute of Electrical and Electronics Engineers, 2019. p. 24-26 8715249 (2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018).

Research output: Chapter in Book/Conference paperConference paper

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AB - This paper presents Low temperature (50 degrees C) high deposition rate (1.3nm/sec) inductively coupled plasma chemical vapor deposited silicon and silicon oxide films with uniform thicknesses over large area. It is observed deposition rate of Si thin is influenced by the SiH4 flow rate and nitrous oxide flow rate for SiOx thin films. The stress in the silicon layer is nominal hence they can be used as the structural or sacrificial layers. Silicon oxide layers showed moderately high stress and they are well suited as sacrificial layers for MEMS application. All layers are deposited at 50 degrees C hence they are well suited for deposition on flexible polymers which are extensively used in metamaterial, MEMS and microfluidic applications.

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Revuri PK, Tripathi DK, Martyniuk M, Silva KKMBD, Putrino G, Keating A et al. Silicon and Silicon dioxide thin films deposited by ICPCVD at low temperature and high rate for MEMS applications. In 2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018. IEEE, Institute of Electrical and Electronics Engineers. 2019. p. 24-26. 8715249. (2018 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2018). https://doi.org/10.1109/COMMAD.2018.8715249